这是在其上面产生负偏压的电阻器。
This is the resistor on which the negative bias is developed.
膜的相组成主要是基板负偏压所决定的。
The film component phase is dependent primarily on the negative bias of substrate.
目前，负偏压是增强金刚石核化最有效的方法。
At present, the negative bias is the most effective method of enhancing diamond nucleation.
负偏压过大对吸附离子产生反溅射作用导致涂层厚度减小。
Ions sputtering could lead to the decrease of the thickness when the substrate negative bias voltage increases excessively.
重点探讨了薄膜的结构、光电性质与衬底所加负偏压的关系。
It was observed that the structure, electrical and optical properties of films depend on the b.
本文主要论述基板负偏压与A 3钢基体磁控溅射离子镀铝膜相组成的关系。
This paper mainly deals with the relationship between negative bias of substrate and component phases of magnetron-sputtering ion plated aluminium film of A3 steel.
当负偏压超过200V后，由于薄膜中石墨相增多，薄膜表面粗糙度将增大。
However, when the substrate negative bias is more than 200 v, the surface roughness of the films is increased because of the increased graphite phase in the films.
在微波等离子体化学气相沉积金刚石膜时，采用负偏压使氢和硼离子轰击金刚石膜表面。
The hydrogen and boron ion bombardments were performed by applying a negative bias voltage to the substrate during microwave plasma chemical vapor deposition process.
直接施加于试样的脉冲负偏压对等离子体特性没有明显影响，但存在着一定的溅射作用。
The influence of negative pulse voltage applied directly to stainless steel samples on plasma characteristics has been found to be negligible, except sample sputtering.
介绍的新型CUK型变换器，旨在实现一种高效、低成本、输出电压纹波极低的负偏压设计方案。
The newly CUK controller realizes a kind of high efficiency, low cost and very low output voltage ripple negative bias voltage design.
为了得到高质量的金刚石薄膜本研究对于石英玻璃的表面进行了清洗并用了负偏压增强形核的方法。
In order to grow high quality diamond film, this experiment using cleanout and negative bias to improve nucleus.
纳米压痕试验结果表明，通过改变沉积负偏压和C_2H_2流量可以提高薄膜的硬度和弹性模量。
The nano-indentation results show through changing the deposited voltage and C_2H_2 gas flux rate could increase the hardness and elastic modulus of the films.
采用过滤阴极真空电弧技术并施加一定的衬底负偏压，在P（100）单晶硅片上制备出四面体非晶碳薄膜。
Tetrahedral amorphous carbon (ta-C) films have been deposited on P-type (100) polished c-silicon wafer with different substrate negative bias by filtered cathodic vacuum arc technology.
在微波等离子体化学气相沉积装置中，研究了负偏压形核对金刚石薄膜与WC 6 %硬质合金刀具附着力的影响。
The influence of bias enhanced nucleation(BEN) to the adhesion between diamond coating and WC-6%Co carbide cutting tool is researched with the microwave plasma (CVD) instrument.
为进一步提高沉积速度，对灯丝组施加相对于基底夹持器的负偏压，使得在基底和灯丝组之间的DC等离子体也得以保持。
To further increase deposition rates, the filament array is biased negatively with respect to the substrate holder so that a DC plasma is also maintained between the substrate and filament array.
在IR 2110驱动电路的基础上，介绍了产生负偏压和提高驱动功率的电路，并且针对电路中存在占空比的问题，设计了占空比调节电路。
Based on the driving circuit of IR2110, the circuits for producing negative bias voltage and increasing driving power are introduced.
木文对热灯丝cvd沉积金刚石膜的核化过程进行了分析，从理论上研究了负衬底偏压增强活性离子的流量。
In this paper, the nucleation process of diamond by filament CVD was analyzed, and enhanced flux of ions by negative substrate bias was investigated in theory.
对利用热灯丝cvd沉积金刚石膜时负衬底偏压增强金刚石的核化过程进行了分析。
In the paper, the enhancing process of diamond nucleation by negative substrate bias in hot filament CVD system was analyzed.
本文对热灯丝cvd沉积金刚石膜的核化过程进行了分析，从理论上研究了负衬底偏压增强活性离子的流量。
In this paper, the nucleation process of diamond by filament CVD was analyzed, and enhanced flux of ions by negative substrate bias was investigated in theory.
着重分析了负衬底偏压增强金刚石核化的机制。
The mechanism of negative bias enhanced diamond nucleation is emphatically analyzed.
研究表明，负衬底偏压增强成核主要是发射电子和离子轰击的结果。
The nucleation enhancement by the negative biased substrate is believed to be a result of the electron emission and ions bombardment.
结果表明扩散系数和扩散距离都随着负衬底偏压的增大而增大。
The results showed that diffusion coefficient and diffusive distance increased with raising of negative substrate bias.
举个例子，为了衡量负电源纹波抑制比，放大器的-VS通过端口1与负直流电压通过8753的偏压口与正弦波叠加。
To measure negative PSRR, for example, the amplifier's -vs pin comes through port 1, with the negative dc voltage through the bias port, of the 8753 with a superimposed sinusoid.
结果表明扩散系数和扩散距离都随着负衬底偏压的增大而增大。
The deposition rate increases with the increasing of bias voltage pressure.
结果表明扩散系数和扩散距离都随着负衬底偏压的增大而增大。
The deposition rate increases with the increasing of bias voltage pressure.
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