本文报道了MIM隧道二极管的发光和负阻现象，用梯形势垒计算了电流-电压特性。
This paper reports the light emission from MIM tunnel diode and Negative Differential Resistance (NDR) in its I-V characteristic curve.
共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。
The resonant tunneling diode (RTD) is one of the most promising band-gap engineered heterostructure devices due to its negative differential resistance.
共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。
The resonant tunneling diode (RTD) is one of the most promising bandgap engineered heterostructure devices due to its negative differential resistance.
通过建立平面离子二极管模型，分析了负脉冲阶段二极管中初始等离子体的形成。
On the bipolar-pulse mode HIPIB apparatus, a planar diode model of self-magnetic field MID is proposed for analysis of the diode behaviour during the negative pulse stage.
通过建立平面离子二极管模型，分析了负脉冲阶段二极管中初始等离子体的形成。
On the bipolar-pulse mode HIPIB apparatus, a planar diode model of self-magnetic field MID is proposed for analysis of the diode behaviour during the negative pulse stage.
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