由衬底损耗机制，讨论了衬底阻抗、氧化层电容和衬底有效介电常数对滤波性能的影响。
Increasing the substrate resistance and reducing the substrates' oxide thickness and coupled capacitances make a reduction of the substrate loss.
接地电位单元包括在介质衬底的前表面和后表面上以楔形形状形成的并且相互电容性地 耦合的导体对（13，14）。
The ground potential unit includes a pair of conductors (13/14) formed in a tapered shape on the front and the rear surface of the dielectric substrate and mutually capacity-coupled.
铁电电容器形成在衬底上并由一叠层体制成，该叠层体由依次叠置的下电极、电容器铁电膜和上电极构成。
A ferroelectric capacitor is formed above a substrate and made of a lamination of a lower electrode, a capacitor ferroelectric film and an upper electrode stacked in this order.
重点讨论MOSFET的高频寄生参数，包括栅电阻、衬底电阻、寄生电容等。
The high frequency parasitic effect of MOSFET is emphasis on, included gate resistance, substrate resistance, and parasitic capacitance.
本发明提供了一种薄膜晶体管衬底和具有这种薄膜晶体管衬底的显示装置，这种薄膜晶体管衬底能够减小电容器中的层间短路缺陷。
The present invention provides a thin film transistor substrate realizing reduced interlayer short-circuit defects in a capacitor, and a display device having the thin film transistor substrate.
本发明提供一种电容性触摸传感器，其中触摸敏感面板具有布置在衬底的下侧上的驱动电极和布置在上侧上的感测电极。
The invention provides a capacitive touch sensor, wherein the touch sensitive panel has drive electrodes arranged on the lower side of a substrate and sense electrodes arranged on the upper side.
第一电容器，形成于所述半导体衬底上方并且具有包括第一下部电极、第一电容器介电层和第一上部电极的层压结构；
The first and second capacitors each have a multi-layer laminated structure which includes a lower electrode, a capacitor dielectric layer and an upper electrode.
第一电容器，形成于所述半导体衬底上方并且具有包括第一下部电极、第一电容器介电层和第一上部电极的层压结构；
The first and second capacitors each have a multi-layer laminated structure which includes a lower electrode, a capacitor dielectric layer and an upper electrode.
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