给出了不同衬底温度下淀积薄膜中硼深度分布的一些特征。
Some of the characteristics of boron depth profile in these films were presented.
研究了衬底温度对薄膜结构、表面形貌以及介电性能的影响。
Investigated were the effects of substrate temperature on the structures and surface morphology, dielectric properties of films.
随着硅烷浓度的降低或衬底温度的升高，薄膜晶化程度增加。
The crystallinity of the deposited films was enhanced by decreases of silane concentration or increases of the substrate temperature.
还研究了成核阶段衬底温度对薄膜立方相红外吸收峰峰位的影响。
We also investigate the effect of the substrate temperature in the nucleation stage on the FTIR absorption peak position and compressive stress in the thin films.
对制备薄膜的结构和光电性质及衬底温度的影响进行了详细的研究。
Structural, optical and electrical properties of the film dependence of substrate temperature are investigated in detail.
采用VHF-PECVD技术制备了不同衬底温度的微晶硅薄膜样品。
Series of microcrystalline silicon thin films were fabricated by VHF-PECVD at different substrate temperatures (Ts).
研究了PLD系统中用硅板做衬底加热器时影响衬底温度的几个因素。
Using calibrated infrared temperature meter, we studied the influence factor on temperature of silicon heater in PLD system.
实验所得薄膜的光学带隙和暗电导也随衬底温度升高而分别降低和升高。
The optical band gaps of the grown thin films declined and dark electrical conductivity increased with increasing substrate temperature, respectively.
非致冷微测辐射热计具有较大不均匀性，并且输出响应受衬底温度影响很大。
The output responsivity of uncooled microbolometer is nonuniform, and greatly influenced by the substrate temperature.
同时，当衬底温度升高时，观察到了薄膜从柱状结钩向团簇结构转变的现象。
The continuous transition of the film structures from columnar to agglomerated structure was observed with an increase in substrate temperature.
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
Microcrystalline silicon thin films prepared at different deposition parameters using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD).
通过控制参数，在较低的衬底温度下成功获得出(111)择优取向的纳米薄膜。
By adjusting parameters, the films with (111) preferential growth have been successfully obtained at a low temperature.
在热丝化学气相沉积金刚石系统中，衬底温度是影响金刚石成膜质量的关键因素之一。
In HFCVD system the substrate temperature is a key factor which deeply affects the quality of diamond films.
采用PLD方法制备gzo薄膜，衬底温度的改变可以对薄膜的光电性能起到调制作用。
Our results exhibit that the optical and electrical properties of GZO thin films prepared by PLD method can be adjusted by the change of substrate temperature.
对应更高的衬底温度，因薄膜中的氢不能完全中止纳米晶粒界面的悬键，使薄膜能带带尾加宽。
Further increasing the substrate temperature broadens the band tail width of the films because the hydrogen content is too low to passivate the dangling bonds at the NC silicon grain surface.
衬底温度决定原子的表面迁移率，衬底温度是影响淀积的铝膜的均匀性和台阶覆盖能力的主要因素。
Therefore, the substrate temperature was the main factor which obviously affected the atoms distribution and step coverage of Al thin films.
适当选择衬底温度、激光功率和扫描速度可望获得良好的结晶，它对SO I器件的制作是有意义的。
If we select substrate temperature, laser power and the scan speed properly, we can get good crystallization. It is useful to the fabrication of SOI devices.
结果表明，随着甲烷浓度的升高、衬底温度的升高以及沉积时间的延长，金刚石涂层中的压应力增大。
It was shown that, internal stress of nano-diamond films increased with increasing methane concentration, higher substrate temperature and longer deposition time.
实验结果表明，这种薄膜的电学和光学性质依赖于混合气体中的氧浓度、衬底温度以及沉积后的热处理。
The electrical and optical properties of the films were found to depend on the oxygen concentration in the gas mixture and the substrate temperature as well as the post-deposition heat treatment.
为了制备低电阻率、高透射率的大面积CIO薄膜，我们分别研究了溅射氧浓度和沉积衬底温度对CIO薄膜光电特性的影响。
For preparing large area CIO films with low resistivity and high transmissivity, we studied the effect of oxygen density and substrate temperature on optical and electrical properties, respectively.
通过测量X射线衍射（XRD）谱、扫描电镜（SEM）和光致发光（PL）谱，研究了衬底温度改变对薄膜结构和PL的影响。
We had investigated systematically these samples by XRD, SEM and photoluminescence(PL) and the effect of substrate temperature on the structure and optical properties of these samples.
各种MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。
Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.
针对有机半导体材料的蒸发温度低的特点，设计并制作了低温辐射式加热器和衬底加热器。
A low-temperature radiation heater and substrate heater are designed and made aiming at the low evaporating temperature of organic semiconductor materials.
利用CMOS工艺下衬底型双极晶体管的温度特性，设计了一种精度较高的温度传感器。
A high accuracy temperature sensor is designed by applying the temperature characteristics of a substrate bipolar transistor in CMOS technology.
发现适当降低聚焦加热灯强度、提高衬底加热温度可以降低固化前沿温度梯度，从而降低亚晶界等缺陷密度。
It is found that the temperature gradient of solidifying front edge could be reduced by reducing focused lamp intensity and increasing substrate temperature.
讨论了样品的自吸收效应，加热温度、选择性反射带和粒度以及衬底等物理条件对红外辐射光谱的影响。
The effect of sample self absorption, selective reflection, temperature, sample grain and liner on FT IR radiation spectrum are discussed.
研究了衬底材料、基片温度对膜微结构的影响。
The effect of substrate materials and its temperature on film micro structure is studied.
SOI衬底顶层硅呈现高阻状态，合适温度的退火可以明显降低SOI衬底顶层硅电阻率，也可部分减少外延高阻过渡层厚度。
The annealing at the proper temperature may decrease the resistivity of SOI substrate obviously and also improve the resistivity of epitaxial transitional layer partly.
SOI衬底顶层硅呈现高阻状态，合适温度的退火可以明显降低SOI衬底顶层硅电阻率，也可部分减少外延高阻过渡层厚度。
The annealing at the proper temperature may decrease the resistivity of SOI substrate obviously and also improve the resistivity of epitaxial transitional layer partly.
应用推荐