研究混合信号集成电路中衬底噪声耦合反衬底噪声对模拟／数字电路的影响。
The substrate noise fundamental and its effect on the mixed-signal IC is introduced briefly.
衬底噪声耦合是深亚微米混合信号集成电路中常见的噪声干扰效应，严重地影响了模拟电路的性能。
Substrate noise coupling effect often occurs in the DSM mixed signal ICs, which seriously interferes the normal performance of the analog circuits.
讨论分析了衬底驱动MOSFET的工作原理、频率特性和噪声特性，并对其低压特性进行了分析和仿真。
The fundamental principles of the bulk-driven MOSFET, along with the frequency and noise characteristics, are discussed. The analysis and simulation of its low voltage characteristics are also made.
最后还考虑了衬底电阻求解存以及在衬底电阻存在下的最小噪声系数。
Finally, we consider solving the existence of substrate resistance and substrate resistance in the presence of the minimum noise figure.
本论文选用硅单晶太阳能电池器件，对辐照前后的电学参数和噪声参数进行测量，发现硅衬底材料的辐照损伤与电池的性能密切相关。
Through measuring and analyzing, it has been found that there is a strong correlation between the radiation damage of substrate material and the quality of the cells.
本论文选用硅单晶太阳能电池器件，对辐照前后的电学参数和噪声参数进行测量，发现硅衬底材料的辐照损伤与电池的性能密切相关。
Through measuring and analyzing, it has been found that there is a strong correlation between the radiation damage of substrate material and the quality of the cells.
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