本文报导了一种液体探针表面光电压微分谱测量方法。
In this paper a method of measuring differential surface photovoltage spectrum with liquid probe has been reported.
单光束表面光电压谱仪，当光源强度随时间发生漂移时，必然产生结果误差。
Single-beam surface photovoltage spectrum (SPS) apparatus can not avoid the error caused by the drift of light source intensity with time .
测定了七种四苯基卟啉化台物制成的薄膜电极的光电压和光电流及其固体粉末的表面光电压谱。
In this paper, the photoelectrochemical properties of seven tetraphenyl-porphyrin compounds have been studied and the surface photovoltage spectra have been measured.
由于背抛光面对受光面入射光的反射，使得少子产生率和受光面表面光电压都高于单面抛光片。
Because of the reflection on the back surface the minority carrier generation and illuminated surface photovoltage of both sides polished wafer will be higher than one of single side polished wafer.
对其进行了透射电镜(tem)、X射线粉末衍射(XRD)，场诱导表面光电压谱表征(FISPS)。
They have been characterized respectively by transition electronic microscope (TEM), X-ray powder diffraction (XRD), field induced surface photovoltage spectrum (FISPS).
铁杂质是硅片制造过程中常见的重金属沾污，表面光电压（SPV）法可很好地用于测定P型硅中铁杂质。
The impurity of iron is one major heavy-metal contamination on the silicon wafer. Surface photo-voltage method(SPV) can be used to accurately measure the iron contamination within the silicon wafer.
本文改进了常规表面光电压测试少子扩散长度法，采用环形下电极消除了薄样品背面光电压信号对测量结果的影响；
The authors improved the routine steady-state surface photovoltage method to measure minority carrier diffusion length in both sides polished silicon wafers.
本文改进了常规表面光电压测试少子扩散长度法，采用环形下电极消除了薄样品背面光电压信号对测量结果的影响；
The authors improved the routine steady-state surface photovoltage method to measure minority carrier diffusion length in both sides polished silicon wafers.
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