焊点中存在的主要缺陷是气孔，表面下塌，热裂纹，其中气孔主要为氧化膜气孔和匙孔不稳定形成的气孔。
The main defects of laser spot welding of aluminum are crater, hot crack and porosity which created by oxide film and keyhole instability,.
结果表明，该轴断裂是由于轴表面存在焊接缺陷，在旋转弯曲应力作用下产生低应力疲劳开裂。
The results showed that the weld detects on the surface of the axle was the reason to cause low stress fatigue under rotation bending stress which finally lead to the fatigue cracks on the axle.
在氦-氩混合气体保护条件下，对AZ31镁合金板材进行了TIG焊接，获得了表面光滑、无堆高和无变形等缺陷的焊缝。
The He-Ar mixed gas TIG welding for AZ31 magnesium alloy plate by was carried out. The surface of observed joint is smooth free from heap high and appearance defects.
在多冲这种动载应力波作用下的零部件大都在多冲的接触表面出现或引发各种缺陷并导致早期损伤失效。
All kinds of defects appear in the surface of components which under the repeated impact load, and the surface defects make the earlier damage and failure.
为了实现对亚表面下细小缺陷的检测，采用了法拉第磁光效应和电涡流效应相结合的方法。
The Faradays magnetic optic effect is combined with eddy current effect to test the imperceptible flaws in subsurface.
在多冲载荷作用下，零部件大都会在其接触表面出现宏观可见的变形，并引发各种缺陷，从而导致零件损伤失效。
Under the effect of this kind of load, there are microscopic deformations and various disfigurements appear on the contact surface of the parts, and then lead to damage and failure.
目前表面检测技术已经比较成熟，但对精密表面下的细小缺陷却没有理想的检测手段。
At present the surface measurement technology is getting mature, but there isn't ideal means for the measurement of subsurface which is under the precision surface.
第五章中，研究了具有缺陷的不可压超弹性材料组成的球体在表面均布的拉伸死载荷作用下的径向运动问题。
In Chapter 5, problem of radial motion for a solid sphere composed of an imperfect incompressible hyper-elastic material, subjected to a surface tensile dead load, is examined.
可以得出结论，在该种参数配置下，辐射的频率输出是随着光子晶体表面缺陷的加大而减小。
Thus we can try to obtain larger output frequency through making larger defect in the photonic crystal.
通常情况下，为了弥补塑料制品的表面缺陷，需要通过后续喷涂的方式来解决表面的缺陷问题，但这样会给产品带来不环保的问题。
Generally speaking, the method to make up the surface defects of plastic products is follow-up spraying, which will make products less environment friendly.
同时芯片表面钝化层内的缺陷数目也在温度作用下增加，引起芯片表面复合速度增加。
Simultaneously, defects in the passivation layer of the device surface are also increased with the increasing of the baking temperature and also the surface recombination velocity.
同时芯片表面钝化层内的缺陷数目也在温度作用下增加，引起芯片表面复合速度增加。
Simultaneously, defects in the passivation layer of the device surface are also increased with the increasing of the baking temperature and also the surface recombination velocity.
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