一第一氮化物蚀刻终止层沉积于该衬底上。

A first nitride etch stop layer is deposited over the substrate.

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一第二氮化物蚀刻终止层沉积于该第一氮化物蚀刻终止层上。

A second nitride etch stop layer is deposited over the first nitride etch stop layer.

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当达到对所述硅层的预先设定的蚀刻深度时，终止所述主蚀刻步骤，所述预先设定的蚀刻深度是所述硅层厚度的至少70％；

The method also includes terminating main etch step when a predefined etch depth of at least 70 percent of thickness into silicon layer is achieved.

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当达到对所述硅层的预先设定的蚀刻深度时，终止所述主蚀刻步骤，所述预先设定的蚀刻深度是所述硅层厚度的至少70％；

The method also includes terminating main etch step when a predefined etch depth of at least 70 percent of thickness into silicon layer is achieved.

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