随硫化温度升高及硫化时间延长，薄膜电阻率上升。
Increasing sulfidation temperature and time can enhance the resistivity of the pyrite films.
四探针测量金属薄膜电阻率是当今微电子技术领域中常用的方法。
A measurement of resistivity of metal film using four-point probe technique can be used as the general physics experiment.
薄膜电阻率随退火温度的变化行为与薄膜微观结构的变化以及界面扩散有关。
The annealing behavior of the resistivity is correlated with the microstructure and interfacial diffusion of the films.
四探针法测量了薄膜电性能，薄膜电阻率平均变化达到103，比理论上只相差一个数量级；
The ratio of resistance change is tested using Four Probes Method. The average change reaches 103, and is near to 104 of the theory estimation.
实验结果表明：退火后样品的薄膜电阻率显著减小，是未退火样品薄膜电阻率的3.17分之一；
The experimental results indicated that the film resistivity of the sample annealed was reduced significantly and only one 3.17 of the unannealed.
在玻璃衬底上改变实验条件沉积了不同颜色的薄膜，测量了不同色泽薄膜的电阻率和制备条件的关系。
The films of different color were deposited on the glass substrates with different experimental conditions, the resistivity of different color films was measured.
结果表明选用较高电阻率的磁性薄膜和优化磁路设计，是薄膜电感器设计中必须考虑的问题。
Results indi- cates that magnetic films with relatively higher resistivity and optimized magnetic circuit have to be considered in film inductor design.
用扫描电子显微镜观察所得金刚石膜的表面形貌，用ZC 36高阻仪测量金刚石薄膜的电阻率。
The surface morphology of the diamond films were observed with SEM, and the resistivity of diamond films were measured with ZC36 high resistance instrument.
硅化钛薄膜由于电阻率低和其它一些良好特性，在VLSI的栅电极和互连线中显示出它潜在的优势。
The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.
本论文依据四探针法的基本原理并结合双脉冲技术，设计并制造适用于薄膜温差电材料的电阻率测试系统。
The thin film TE material resistivity measurement system which is designed in the thesis bases on the principle of four-probe method and double pulse technology.
为了制备低电阻率、高透射率的大面积CIO薄膜，我们分别研究了溅射氧浓度和沉积衬底温度对CIO薄膜光电特性的影响。
For preparing large area CIO films with low resistivity and high transmissivity, we studied the effect of oxygen density and substrate temperature on optical and electrical properties, respectively.
随着退火温度的上升，薄膜表面质量下降，分形维和电阻率也随之降低。
The results indicate that the surface quality, FD and resistivity of the film increase with the sputtering time, but decrease with the Annealing temperature.
介绍了薄膜磁电阻率的自动测试方法。
The automatic measurement of the resistivity of thin films is introduced in this article.
薄膜室温电阻率随着退火温度的上升， 呈先上升、后下降趋势；
With the annealing temperatures increasing, the room temperature resistivity of the films rises at the beginning, then goes down.
并对薄膜的晶相结构、电阻率、光透过率、光吸收系数等电学和光学性质进行了测试和分析。
Test and analysis some properties such as crystal structure, superficial resistivity, light transparence, absorption coefficient etc.
溅射压强对薄膜的电阻率和微观结构有显著影响。
The sputtering pressures plays an important role on the microstructure and electrical resistivity of TAZO films.
该系统能够满足对任何形状薄膜试片的电阻率测试，包括尺寸较小或者形状不规则的薄膜试片。
The system is applicative for any shape of thin film sample including small-size and anomalous shape.
考察了工艺参数对薄膜质量的影响，对薄膜的表面形貌，薄膜的生长速率以及热处理与薄膜的成相及其电阻率的关系进行了观察和分析。
The effects of the technological parameters on the quality of the films were studied. The growth rate and surface morphology of the films with cycle times were characterized.
但是厚度继续增加，薄膜晶体结构反而恶化，电阻率升高。
However, the thickness continued to increase, but the deterioration of the structure of film grain, lower resistivity.
研究结果表明，溅射压强对TGZO薄膜的结构和电阻率有重要影响。
XRD photos indicate that the sputtering pressure plays an important role on the microstructure and electrical resistivity of TGZO films.
而过多杂质的掺入会导致氧化锌薄膜晶体质量下降，这可能是氨气流量更大时电阻率再一次增大的原因。
Moreover, high density impurities might be formed in the ZnO lattice as NH_3 flow rate increased further, which could induce degradation of crystal quality causing the increase in the resistivity.
而过多杂质的掺入会导致氧化锌薄膜晶体质量下降，这可能是氨气流量更大时电阻率再一次增大的原因。
Moreover, high density impurities might be formed in the ZnO lattice as NH_3 flow rate increased further, which could induce degradation of crystal quality causing the increase in the resistivity.
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