文章还从实验和理论上分析了影响多晶硅薄膜生长速率的因素。
According to the theory and the experiment mentioned in this paper, the factors which effect the growth rate of polysilicon film have been analysed.
随着薄膜生长速率的降低，锡膜由金属转变为半导体，呈现出非金属导电特性。
The specimens deposited at lower rate show some nonmetallic properties. In the present paper, the result as mention above is interpreted from the theory of Anderson localization.
在该模型中，我们考虑了沉积速率、沉积温度以及沉积角度等影响薄膜生长的参数。
By simulation of thin films growth, some microscopic processes can be revealed in extreme condition, such as high temperature and high deposition rate.
随着溅射电压的增大，薄膜的生长速率随之增大，二者近似线性关系。
With the augment of sputtering voltage, the growth speed of films became higher accordingly and the relation was nearly linear under the experimented conditions.
而工作气压对生长速率、薄膜形貌和微观结构的影响不明显。
The growth rate, film morphology, and microstructure are not sensitive to the deposition pressure.
模拟不同沉积速率下超薄膜多中心生长过程。
The multiple cluster growth process of ultra-thin films at different deposition rates has been simulated.
考察了工艺参数对薄膜质量的影响，对薄膜的表面形貌，薄膜的生长速率以及热处理与薄膜的成相及其电阻率的关系进行了观察和分析。
The effects of the technological parameters on the quality of the films were studied. The growth rate and surface morphology of the films with cycle times were characterized.
考察了工艺参数对薄膜质量的影响，对薄膜的表面形貌，薄膜的生长速率以及热处理与薄膜的成相及其电阻率的关系进行了观察和分析。
The effects of the technological parameters on the quality of the films were studied. The growth rate and surface morphology of the films with cycle times were characterized.
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