通过调整实验的工艺参数，最终得到电阻温度性能较好的镍薄膜温度传感器。
The Ni thin film thermistor was therefore obtained as temperature sensor with higher resistance-temperature performance by readjusting relevant technological parameters.
介绍了计算磁光记录薄膜温度特性的基本原理，提出了RE - TM磁光记录薄膜温度特性计算的遗传算法。
In this paper, the basic calculation principle of the temperature dependence of saturation magnetization (Ms) of magneto-optical recording film is briefly introduced.
一片带含硅液体的薄膜附着于内镜。含硅液体无论在任何温度下都保持透明和流动。
Attached to the latter is a membrane filled with a silicon-based liquid, which remains transparent and fluid at any temperature.
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).
本项研究目的是制作微型高精度铂薄膜热敏电阻器与集成电路配合，用于工业和科研中温度的精确测量。
The micro Pt-film thermal resistors of high precision are developed to match the ICs for precise temperature measurement in industry and scientific research.
即首先利用薄膜分散超声破碎法制备pl水分散液，然后与HA的水溶液混合，恒定温度搅拌一定时间得到复合物。
Then the suspension of pl was mixed with HA solution and the complex was obtained after stirring under a constant temperature for a definite time.
设计了一种铂薄膜热电阻温度探针。
A platinum film resistance temperature probe has been designed.
薄膜的热分解温度提高。
The thermo-decomposed temperature of the films are improved.
塑料薄膜覆盖提高苗床的土壤温度，促进作物较快发育并提早成熟。
Plastic mulch increases soil temperature in the bed which promotes faster crop development and earlier yields.
用水基凝胶注法制备出ysz固体电解质薄膜，研究了温度、湿度和坯体厚度对干燥过程的影响规律。
YSZ solid electrolyte film was prepared by aqueous gel casting. The influences of temperature, relative humidity and sample thickness on drying process were studied.
随着温度的提高，薄膜的电导率也增高。
And the conductivity of film also enhanced with the temperature elevated.
研究了前驱体浓度、PEG2000加入量及不同水浴温度对薄膜结构和性能的影响。
The effects of precursor concentration, PEG2000 content and water bath temperature on the characteristics of films were studied.
文中所论述的恒定的基板温度对沉积金刚石薄膜是非常重要的。
It's discussed that constant temperatures of substrate are very important to the deposition of the diamond film.
随硫化温度升高及硫化时间延长，薄膜电阻率上升。
Increasing sulfidation temperature and time can enhance the resistivity of the pyrite films.
在某一特定的温度处，氧化钒薄膜发生金属-半导体相的转变。
At a critical temperature, vanadium oxide films undergo phase transition between metal phase to semi-conducting phase.
此外，随退火温度升高，铁电薄膜的自发极化强度先增强后减弱。
The spontaneous polarization of ferroelectric films was strengthened and then weakened with the increasing of annealing temperature.
研究了衬底温度对薄膜结构、表面形貌以及介电性能的影响。
Investigated were the effects of substrate temperature on the structures and surface morphology, dielectric properties of films.
对于薄膜，在较低的温度甚至室温下就可能发生显著的反应或互扩散。
For the case of multilayer thin films, atoms may react to and interdiffuse at the interfaces at low temperature even room temperature.
考察了吸氧薄膜配方、温度和湿度对吸氧性能的影响。
The influences of the film composition, environmental temperature and humidity on the oxygen absorbing performance were examined.
研究了有晶种层的PLZT薄膜的结晶温度及介电性能。
The crystallization temperature and dielectric properties of PLZT thin films with PLT seeding layers were investigated.
研究了制备薄膜的结构、成分、电学和光学特性以及退火温度对薄膜性能的影响。
The structure, electrical and optical properties of the deposited films have been studied with various annealing temperatures.
考察了离子束流密度和基底温度对薄膜性能的影响。
The effect of ion beam flux density and the temperature of Si substrate on the properties of the film was investigated.
发现在较低退火温度下得到(110)择优取向的LNO薄膜，较高退火温度下得到(100)择优取向的LNO薄膜。
The LNO thin films annealed at lower temperature have (110) preferred orientation, while the films annealed at higher temperature have (100) preferred orientation.
给出了不同衬底温度下淀积薄膜中硼深度分布的一些特征。
Some of the characteristics of boron depth profile in these films were presented.
本文用有限差分法对金属钛表面脉冲激光生成氮化钛薄膜过程的温度场进行了三维数值模拟计算。
In this paper, numerical simulation for TiN films generated on titanium surface using laser gas alloying (LGA) method is performed by finite difference method.
进而根据界面能对相变温度的影响，对钛酸铅薄膜的相变温度随薄膜厚度的变化规律进行了解释。
The mechanism of phase transition temperature of film changing with film thickness is explained by the influence of Gibbs free energy on phase transition.
结果表明，掺杂和热处理温度对薄膜晶粒尺寸的大小、薄膜的结构形态均有较大的影响，进而影响薄膜的电导及传感器的灵敏度。
The results indicates that doping and temperature of heat treatment greatly affectes the structure of thin film and its size of crystalline grain, thereby, influences its conduction and sensibility.
针对瞬态温度测量设计了一种薄膜热电偶，提出了一套瞬态温度传感器动态标定的实验方案。
In this paper, a kind of thin film thermocouple is designed for transient temperature measurement, and a new experimental scheme of temperature transducer dynamic calibration is presented.
针对瞬态温度测量设计了一种薄膜热电偶，提出了一套瞬态温度传感器动态标定的实验方案。
In this paper, a kind of thin film thermocouple is designed for transient temperature measurement, and a new experimental scheme of temperature transducer dynamic calibration is presented.
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