并研究了工艺参数对薄膜沉积速率、硬度和表面粗糙度的影响。
The effect of technical parameters on deposition rate, hardness and surface roughness of DLC films were researched.
氧分压和沉积速率对YSZ薄膜残余应力的影响。
Influences of Oxygen Partial Pressure and Deposition Rate on Residual Stress of YSZ Thin Films.
研究了各种实验参数对沉积速率、薄膜组成及膜层硬度的影响,认为偏压是最具影响的参数。
The influence of various experimental parameters on deposition rate film composition and hardness has been studied, Bias is considered as the most effective Darameter.
研究了氧流量和脉冲偏压对薄膜相结构、沉积速率、表面形貌、薄膜硬度的影响。
The effects of the flow rate of oxygen and pulse bias voltage on the structure, deposition rate and the surface morphology of thin film were studied.
在该模型中,我们考虑了沉积速率、沉积温度以及沉积角度等影响薄膜生长的参数。
By simulation of thin films growth, some microscopic processes can be revealed in extreme condition, such as high temperature and high deposition rate.
系统地研究了溅射功率对沉积速率、薄膜结构、组织形貌及接触性能的影响。
The influences of the sputtering power on deposition rate, film structure, and contact performance of the film prepared on CdZnTe substrate have been investigated.
MPE制备薄膜技术采用单一先体溶液,源物质来源广泛,沉积速率快,不需后续热处理。
MPE technique shows remarkable advantages such as single precursor, wide choices of source materials, high deposition rate, and no subsequent annealing.
结果表明,氧化铝薄膜的沉积速率随溅射功率的增大先几乎呈线性增大而后增速趋缓;
The results show that the deposition rate firstly increases linearly and then changes little with the increase of sputtering power.
模拟不同沉积速率下超薄膜多中心生长过程。
The multiple cluster growth process of ultra-thin films at different deposition rates has been simulated.
薄膜的沉积速率随溅射功率增大而增大,随n 2压力增大而减小。
While the deposition rate increased with the RF power, but decreased with the N2 pressure.
分别考察了载气、沉积温度以及原料配比等工艺参数对沉积速率的影响,并对薄膜的组成、结构及硬度等性能进行了分析。
The influence parameters on deposition rate was investigated, and the composition and structure of as-deposited films were characterized by IR, XRD and hardness measurement.
分别考察了载气、沉积温度以及原料配比等工艺参数对沉积速率的影响,并对薄膜的组成、结构及硬度等性能进行了分析。
The influence parameters on deposition rate was investigated, and the composition and structure of as-deposited films were characterized by IR, XRD and hardness measurement.
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