在切断一薄膜半导体器件的方法。
介绍了金刚石薄膜的性质、当今金刚石薄膜半导体器件的技术、水平和性能。
In this paper, the characteristics of the diamond films, the technology, the level and the performance of the diamond films semiconductor devices are introduced.
以玻璃为基底的非晶硅图形式结晶，对于研制用于矩阵液晶显示的薄膜半导体具有重要意义。
Patterned crystallization of amorphous silicon (a-Si) on substrates of glass is very important for the fabrication of thin film transistor used in active matrix liquid crystal displays.
这些微小的半导体把电子注入到金属氧化物薄膜中，或者说把它“敏化”，从而增强太阳能转换。
These tiny semiconductors inject electrons into a metal oxide film or "sensitize" it to increase solar energy conversion.
半导体光电薄膜的分析和检测是器件开发中必须首先要解决的重要问题之一。
The subject of analysis and inspection of semiconductor optoelectronic film is one of the most important problems for device development.
半导体超晶格和量子阱材料是用现代薄膜生长技术制成的一种新型的人造材料。
Superlattice and quantum well materials of semiconductor are new-style synthetic materials made in modern film growth techniques.
为使半导体产品达到所要求的光学、电子和机械性能，必须实时地在沉积过程中直接测量薄膜应力。
In order to meet the requirements of optical, electronic and mechanical performance of semiconductor products, it is necessary to measure thin film stress during the deposition.
本发明公开了一种二维有序有机半导体复合纳米薄膜及其专用基底与它们的制备方法。
The invention discloses two-dimensional ordered organic semiconductor compound nanometer film and the special-purpose substrate thereof, and the preparation method thereof.
这种测试仪在电子玻璃、半导体、集成电路、薄膜和纳米技术等领域都具有很大的应用前景。
This kind of tester has a enormous practical prospect in many fields, such as electronic glass, semiconductor, integrated circuit, thin films and technology of nanometer.
报导了半导体薄膜CO2气体敏感膜的制备，敏感膜的结构特性、温度特性、灵敏度及响应特性和稳定度。
This paper reports the formation of the semiconductor CO2 thin-film and the structure, sensitivity, stability, temperature characteristic and response property of this sensing film.
制备半导体膜的固定化是解决这一问题的有效途径之一，而溶胶凝胶技术可以实现薄膜的固定化。
The immobility of semiconductor thin films is one of the effective methods to solve this problem, while sol-gel technology can realize the immobility of thin films.
型半导体氧化锌薄膜，其制备方法，和使用透明基片的脉冲激光沉积方法。
P-type semiconductor zinc oxide films, process for preparation thereof, and pulsed laser deposition method using transparent substrates.
文章分析了半导体薄膜生长工艺流程的特点。
The process characteristics of growth of semiconductor film are analyzed.
金属微粒-半导体薄膜具有特殊的电学、光学及光电特性。
Metallic colloidal particles - semiconductor thin films show special electrical, optical and photoelectric properties.
用物理气相沉积法在水平系统中生长有机半导体并五苯晶体薄膜。
Physical vapor deposition in horizontal systems has been used for the growth of crystal thin-film of organic semiconductor pentacene.
研究了STO薄膜金属绝缘体半导体(MIS)结构的介电和界面特性。
The dielectric and interface characteristics of STO with a metal insulator semiconductor (MIS) structure were investigated.
综述了半导体纳米薄膜热电性能表征的方法及相关的技术原理。
The characterization of thermoelectric properties of semiconductor nano-films on methods and relative theories are reviewed.
研究表明，氧化钛薄膜具有宽禁带的半导体特性，血液相容性优于热解碳。
The The results indicate that titanium oxide films have wide band gap and better blood-compatibility than LTIC.
本文介绍了半导体器件中的优质多晶硅薄膜的生长以及在生长多晶硅薄膜的同时怎样来监控淀积温度；
This paper introduces how to produce high quality polysilicon film in the semiconductor devices and how to monitor the deposition temperature at the same time when film grows.
因此在硅基底上形成金属硅化物薄膜也被广泛应用于半导体工业。
The formation of silicides from the reaction between deposited thin metal films and Si substrates has wide application in the semiconductor industry.
因此，可以容易地制造包含薄膜集成电路的半导体器件。
Therefore, a semiconductor device including a thin film integrated circuit can be manufactured easily.
氧化物磁性半导体薄膜的电输 运性质只与材料中氧空位的浓度相关。
Electric transport property of oxide magnetic semiconductor film is only related to concentration of oxygen vacancy in material.
射频辉光放电等离子体在微电子及半导体薄膜材料生长等方面有着广泛的应用。
Plasma in radio frequency (rf) glow discharge is widely used in the preparation of semiconductor film materials and microelectronic industry.
因此，本发明的优势在于能够制作具有空隙和较少缺陷的平面氮化物半导体薄膜。
Thus, there is an advantage in that it is possible to grow a flat nitride semiconductor thin film with voids and fewer defects.
本发明涉及一种半导体薄膜内包层放大光纤及其预制棒制造方法。
The present invention relates to a semiconductor film internal cladding amplification optical fibre and its perform manufacture method.
电化学沉积薄膜技术工艺设备简单成本低，在半导体薄膜制备方面有很好的应用前景。
Electrochemical deposition is of simple and low cost method, displaying a potential application in the deposition of semiconductor films.
在某一特定的温度处，氧化钒薄膜发生金属-半导体相的转变。
At a critical temperature, vanadium oxide films undergo phase transition between metal phase to semi-conducting phase.
在某一特定的温度处，氧化钒薄膜发生金属-半导体相的转变。
At a critical temperature, vanadium oxide films undergo phase transition between metal phase to semi-conducting phase.
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