它的系统可以让化学品进行原子层沉积,由此生成的晶体是生产芯片和发光二极管的必需品。
Itss systems can deposit layers of chemicals just atoms thick that grow the crystals needed to make chips and light-emitting diodes.
先进的IGBT平面元胞设计同二极管精密的寿命控制工程相结合,这样的芯片就具备了崭新的安全工作区。
Together with the advanced planar cell design of the IGBT and the sophisticated lifetime engineering of the diode, this chip set offers an unprecedented safe operating area.
考虑了工作信号躁声,感光光电二极管深嵌入硅片中,与芯片表面上产生噪声的元件相隔离。
Operating signal noise was also considered, and the sensor photodiodes were deeply embedded in silicon to isolate them from noise-causing elements on the chip surface.
轻拉二极管主干就将裂开的主干与芯片脱离,这个毛病就暴露出来了。
A slight tug on the diode stem will cause the fractured stem to separate from the chip exposing the fault.
波形的产生可以采用两块555芯片,波形的发射可以使用红外线发射二极管。
Waveform generation can adopt two 555 chip, waveform launch can use infrared emission diode.
发光二极管采用进口LED芯片封装。
设计研制了一种集成光电探测器系统,它将光电二极管阵列及信号读出电路集成在同一硅芯片上。
An integrated photodetector system is designed and manufactured, in which the photodetector array and the read-out circuits are integrated on the same silicon chip.
所述的控制电路中采用555ic芯片,其中管脚3与串联分组后的二极管组并联。
The controlling circuit adopts 555ic chip, wherein, a pin 3 and the divided diode groups are connected in series.
在此基础上,采用TI公司的DSP芯片TMS320F 2812搭建了二极管箝位式三电平逆变器的实验平台。
On this basis, a diode clamped three-level inverter experimental is built by TI's DSP chip TMS320F2812.
第一代的调谐器芯片、射频晶体管和二极管需要高达12至15伏的供电电压。
The first tuner semiconductors, RF transistors and diodes, used supply voltages of as high as 12 to 15V.
这两种衰减速率一致光组合成我们所看到的白光,为色稳定性的近紫外芯片激发的余辉二极管的制备提供了依据。
The same decay rate of two kind of light are verified to combine the white light uniformly, providing the possibility for fabricating long aftergolow WLED with color stability during decay.
由于发光二极管能以类似计算机芯片设计的方式生产出来,它们的成本慢慢降下来。
Because they are made in a fashion similar to computer chips, the cost of LEDs has been dropping steadily.
日立,路克斯和其他“芯片”二极管主干与芯片盒的接缝容易开裂。
Hitachi, Lucas, and other "chip" diodes are prone to fracture at the junction of the stem to the case of the chip.
制备了两种1W白光功率发光二极管(LED),这两种样品分别是对台湾和美国两家公司生产的蓝光芯片,涂敷相同荧光粉和透明硅胶封装而成。
Two kinds of 1 W white high power light emitting diode (LED) were made by packaging blue chips from Taiwan and US. The chips were coated by the same phosphor and transparent silica gel.
通常这样的二极管能通过试验台测试,安装到交通工具上就坏了,所以“芯片型”二极管需全部换新。
Frequently these diodes will pass all bench tests and then fail after installation on the vehicle. 100% replacement of all "Chip type" diodes is required.
内透镜与所述发光二极管芯片一起封装,封装后的二极管模块包括底座;
The inner lens and chip of LED are sealed together. The sealed LED module includes base;
内透镜与所述发光二极管芯片一起封装,封装后的二极管模块包括底座;
The inner lens and chip of LED are sealed together. The sealed LED module includes base;
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