这一现象可定性地用自由载流子吸收来解释。
This phenomenon may be explained qualitatively by means of free carrier absorption.
得到了电子亚带能量和波函数随自由载流子浓度的变化规律。
The rules of electron subband energies and corresponding wave functions depending upon free carrier concentration have been obtained.
以单位面积下漂移区自由载流子浓度为基础，得出漂移区电阻的解析模型。
The drift drain resistance model is derived from the free carrier concentration analyzing in the drift region.
观察到了三光子吸收及所伴随的自由载流子的激发态吸收，并测得了三光子吸收系数。
Three-photon absorption and subsequent excited state absorption of the generated electrons and holes have been observed.
研究了用于喇曼放大的绝缘硅(SOI)脊形波导中自由载流子寿命与非线性光学损耗的关系。
The lifetime of free carriers in a silicon-on-insulator (SOI) rib waveguide, which is used for Raman amplification, is studied in connection with the nonlinear optical loss.
从聚合物光电池中光电流和暗电流的产生机制出发，对该现象进行了解释，认为外加磁场可以有效改变单重态极化子对和三重态极化子对之间的相对比例，进而使自由载流子浓度增加。
The results show that the magnetic field can effectively change the relative ratio between the singlet and the triplet polaron pairs, resulting in an increase in the density of the free carriers.
而这种计算机模拟方法不仅可以得到自由光电子的衰减曲线，还可同时获得各种俘获中心中载流子的行为曲线。
However, through computer simulation, it can obtain not only the decay curve of free photoelectrons, but also the behavior curve of carriers in all kinds of trapping centers.
带隙中的深能级束缚自由电子实现补偿作用外，还有限制迁移率及载流子寿命等特点。
In addition to the role of compensation to achieve semi-insulating material, there are restrictions on mobility, carrier lifetime and so on.
带隙中的深能级束缚自由电子实现补偿作用外，还有限制迁移率及载流子寿命等特点。
In addition to the role of compensation to achieve semi-insulating material, there are restrictions on mobility, carrier lifetime and so on.
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