研究了电子的自旋相关的隧穿和极化。
The electron spin dependent tunneling and susceptibility are studied.
简述了与自旋相关的电子的弹性散射和非弹性散射过程；
Spin correlated elastic and inelastic electron scattering processes are briefly described.
研究了磁阱中自旋相关的原子波包的密度分布及其动力学演化。
We have investigated theoretically the density distributions and evolution of the spin-dependent atomic wave packets in a harmonic potential.
这是由于晶界处以及颗粒内部增加的自旋相关的散射和隧穿效应所致。
It is due to the enhancement of spin dependent and independent scattering and tunneling effects on the interfaces of grain boundaries and inside the grains.
全面回顾和总结了磁性隧道结中自旋相关的隧穿这一研究领域的理论和实验方面的最新研究进展。
In this review article we present an overview update on spin-dependent tunnelling (SDT) in magnetic tunnel junctions in theory and experiments.
自旋电子学器件需要一个有效的自旋注入到传统的半导体中，最近人们比较感兴趣的是利用自旋相关的输运现象-自旋轨道耦合来产生自旋极化。
Of special interest is to produce an uneven spin population out of an unpolarized source by means of various spin-related transport phenomena (relativistic spin-orbit interaction).
而且，电子的自旋极化度与系统的结构参数密切相关，因此通过调整磁条可以调控系统中自旋极化电子的行为。
Moreover, electron-spin polarization are relevant to the structure parameters of the system, so we can control spin-polarized electronic behavior by means of adjusting ferromagnetic stripes.
在半金属氧化物颗粒体系中，颗粒边界的作用至关重要，外禀磁电阻效应与穿越颗粒边界的自旋输运过程密切相关。
In half-metallic granular systems, the extrinsic magnetoresistance effect is closely related to the spin-dependent transport processes across grain boundaries (GBs).
非均匀颗粒系统呈现的磁电阻效应与电子在两相颗粒界面的自旋相关散射有关。
The room magnetoresistance effect is largely enhanced in such an inhomogeneous granular system due to the spin dependent scattering of electrons at the interface of the two phases.
一定大小的外磁场范围内，自旋阀GMR对磁场大小不敏感，而仅对外磁场的方向敏感，并获得了相关的数据；
In a typical magnetic field intensity spin-valve GMR is not sensitive with the magnetic field intensity but it is sensitive with the direction of magnetic field, and we got some useful data;
磁电阻的本征效应和传导电子在界面处的自旋相关散射作用是产生室温下增强磁电阻效应的主要原因。
The enhancement of MR effect at room temperature was mainly related to the coexistence of intrinsic MR properties and the spin dependent scattering of conduction electrons at the interfaces.
磁电阻的本征效应和传导电子在界面处的自旋相关散射作用是产生室温下增强磁电阻效应的主要原因。
The enhancement of MR effect at room temperature was mainly related to the coexistence of intrinsic MR properties and the spin dependent scattering of conduction electrons at the interfaces.
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