首先，在利用自旋极化电流来驱动之磁性记忆体的研究中，发现藉由改变自 由层钴铁硼的覆盖层可以用来调变它的饱和磁化量以及自旋阻尼系数。
Firstly, in the concept of spin torque transfer MRAM, we can manipulate the damping constant and saturation magnetization of CoFeB by simply adjusting the capping layers.
唯一的挑战是，如何提取自旋来形成一个自旋极化的电流，然后注入到电路中并保持极化在沿途不发生退化。
The challenge, however, is extracting the spins to form a spin-polarized current and injecting them into a circuit without the polarization degrading along the way.
唯一的挑战是，如何提取自旋来形成一个自旋极化的电流，然后注入到电路中并保持极化在沿途不发生退化。
The challenge, however, is extracting the spins to form a spin-polarized current and injecting them into a circuit without the polarization degrading along the way.
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