智能功率模块 （IPM）自举电路的自举过程进行了分析。
The bootstrap process of intelligent power module (IPM) bootstrap circuit was analyzed.
本文从MOS管电容模型出发详细分析了MOS源漏自举电路的自举物理过程，认为其中负载管栅电容主要起耦合作用。
The processes of the bootstrapping from source and drain are analyzed in detail based on the capacitor model of MOSFET and it is pointed out that the gate capacitance mainly plays a part of coupling.
系统采用电压空间矢量脉宽调制（SVPWM）技术并设计了具有自举功能的驱动电路。
The SVPWM technology was applied and the driving circuit with bootstrap function was proposed.
偏置电路采用自举基准源，具有良好的电源抑制比。
A bootstrap MOS circuit is introduced for bias, which shows a good performance in power supply reject ratio.
介绍高压浮动MOSFET自举驱动电路的工作原理和高压驱动芯片的内部原理；讨论影响自举电容设计的各种因素，并给出自举电容的计算公式。
The principle of bootstrap driving circuit for high voltage floating MOSFET and the internal circuit principle of high voltage driving IC are introduced.
介绍高压浮动MOSFET自举驱动电路的工作原理和高压驱动芯片的内部原理；讨论影响自举电容设计的各种因素，并给出自举电容的计算公式。
The principle of bootstrap driving circuit for high voltage floating MOSFET and the internal circuit principle of high voltage driving IC are introduced.
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