你可以使用一个便宜的npn型晶体管，比如2n2222，放大该脉冲到后续电子元件的接口。
You can use a cheap NPN transistor such as a 2n2222 to amplify this pulse, to interface with the next stage of electronics.
详细地介绍了可控硅整流器(SCR)线型触发器的改进型设计方案，提出了用于高脉冲重复频率的双极晶体管触发器的实用新电路。
An improved plan of silicon controlled rectifier (SCR) line type trigger is described in detail. Anew practical circuit of bipolar transistor trigger for high pulse repeat frequency is presented.
利用定时器ne556和程控单结晶体管，设计了一种新型多路脉冲分配器。
Describes a new design of pulse frequency dividers in which timers NE556 and sequence control unijunction transistors are used.
它采用数字脉冲集成电路取代早先的晶体管震荡电路，性能更稳定，操作更安全、方便。
It makes use of digital pulse IC circuits to replace the old transistor oscillator circuits and has great improvement in stability, security and convenience.
空间电磁脉冲注入硅双极型晶体管后可能会导致晶体管烧毁。
Bipolar junction transistors may be burned out by injected electromagnetic pulse.
为此，提出了功率步进电动机的新的驱动方法——脉冲调整法，并提供了晶体管电路和初步实验结果。
A new control method, the pulse-regulation method, is proposed and a transistor circuit is designed. Some preliminary experimental results are thereby given.
讨论了采用级联双极性晶体管结构的超宽带极脉冲发生器，并对其电路及双极性晶体管雪崩的工作原理进行了具体分析。
The paper analyses the electric circuit and the working principle of the avalanche of the bipolar transistor of the pulser with a cascade connected bipolar transistor structure.
实验结果表明，自振式晶体管脉冲电源因其加工速度慢并不适于微细放电加工。
The experimental results reveal that the transistor type pulse train generator is unsuitable for micro-EDM due to its low removal rate.
详细介绍了快速高压晶体管开关在加速器束流脉冲化和用于二次离子测量的加速器飞行时间谱仪上的应用。
The application of Fast High Voltage Transistor Switches (HTS) in pulsed ion beam and the time of flight (TOF) setup is described.
本文较系统地介绍了晶体管脉冲调宽调速系统的构成及工作原理，给出了基本的设计方法。
In this paper, the construction and operating principle of the transistor speed regulation system with PWM are described. The basic design metho...
本文较系统地介绍了晶体管脉冲调宽调速系统的构成及工作原理，给出了基本的设计方法。
In this paper, the construction and operating principle of the transistor speed regulation system with PWM are described. T...
特别地，当一个高功率电磁脉冲突然加载在晶体管上时，会导致晶体管的电击穿或热击穿。
In particular, as a high-power EMP is suddenly injected into a transistor, electrical or thermal breakdown can be definitely caused.
本文较系统地介绍了晶体管脉冲调宽调速系统的构成及工作原理，给出了基本的设计方法。
In this paper, the construction and operating principle of the transistor speed regulation system with PWM are describe...
本文较系统地介绍了晶体管脉冲调宽调速系统的构成及工作原理，给出了基本的设计方法。
In this paper, the construction and operating principle of the transistor speed regulation system with PWM are describe...
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