低能带隙聚合物对光电器件具有重要的意义。
It is important of applications of low band gap polymers to improve the properties of their photoelectric devices.
这是光电探测器，能带隙为2电子伏，当它反应于可见光。
These are photodetectors, band gap two electron volts, respond to visible light.
因此，设计高性能带隙基准源具有实际工程意义。
Therefore, high-performance bandgap reference design has practical engineering significance.
本发明的提供了一种增加氢化非晶硅薄膜能带隙的方法，将氟元素加入到非晶硅材料中。
The invention provides a method for increasing the energy band gap of a hydrogenated amorphous silicon thin film, which adds fluorine elements into the amorphous silicon materials.
本发明的薄膜具有更宽的能带隙，具有这种薄膜的太阳能电池能够显著提高光电转换效率和稳定性。
The thin film of the invention is provided with wider energy band gap, and solar cells provided with the thin film can significantly improve the photoelectric conversion efficiency and stability.
用激光制作了离轴体积位相全息菲涅耳透镜，并把它们和相应的具有不同能带隙的太阳电池匹配，其能量转换效率提高了两倍。
A volume phase and off-axis holographic Fresnel lenses was developed for matching the corresponding solar cells with different band gaps. The conversion efficiency of energy increased by two times.
聚合物能带隙工程作为半导体聚合物研究的新兴领域，对于半导体聚合物材料的应用以及半导体聚合物器件的各项性能的提高起着非常重要的作用。
Polymer band gap engineering is a new field on semiconducting polymers research. It is important for applications of semiconducting polymers and improvement of properties of their devices.
分析了晶格畸变和能带间排斥效应对带隙的影响。
The lattice strain and band repulsion affecting band gap is investigated.
光子晶体是一种具有光子能带及能隙的新型材料。
Photonic crystal is a new kind of materials with photonic band gap.
研究表明：镶嵌在绝缘介质薄膜中的纳米锗颗粒的能带是量子化的，随着纳米锗粒子平均尺寸的减小，其吸收带隙增加，吸收带边蓝移的程度相应增大。
In comparison with that of the bulk Ge crystals, the nanocrystalline Ge show a blue shift of energy and the optical band gap increases with decreasing of the particle size of the nanocrystallites.
纳米二氧化钛能带和导带之间的带隙能为3。
The optical band gap between nano-TiO 2 energy band and conduction band is3.
从得到的色散曲线看到等离子体光子晶体具有光子能带和能隙结构。
The dispersion curves showed that plasma photonics crystal has the structure of photonic energy band and energy gap.
介绍了用循环伏安法确定导电聚合物能隙和能带参数的方法。
Energy gap and energy band parameters were determined by using cyclic voltammetry.
使用第一性原理和赝势方法研究了Ge_（50）Sn_（50）有序合金直到9GPa压力下的能带结构和带隙的压力依赖性。
First principles and pseudopotential approaches have been used to investigate band structures and pressure dependence of the band-gaps of ordered zincblende Ge_(50)Sn_(50)alloy up to 9 GPa.
它们具有很多独特的物理性质：对称的能带结构、强烈依赖于温度的带隙、一个重空穴带的缺失、低的俄歇复合率等。
They have many interesting physical properties, such as symmetric band structure, strong temperature dependences of energy gaps, absence of a heavy hole band, and low Auger recombination rates, etc.
电子能带结构计算表明sc - C20为宽带隙(4.20eV)半导体型碳，并且随着压力升高带隙呈现增大的趋势，sc - C20带隙的大小及变化规律与金刚石相似。
Electronic band structure calculations show that sc-C20 is a semiconductor with wide band gap of 4.20 eV, and the gap increase with pressure, similar to that of diamond.
反式聚乙炔在重掺杂时会出现孤子晶格，在能隙中央形成孤子能带。
Because soliton lattice should be emerged in trans polyacetylene whe.
由于石墨烯纳米带在实际应用中需要不同的带隙，我们讨论了石墨烯纳米带在形变条件下的电子能带结构。
We discuss the electronic structures of the deformed graphene nanoribbons, because we need the different energy gap when we put the graphene nanoribbons into the application.
通过分析这种光子晶体的能带结构，显示其存在部分带隙。
Band structure of the photonic crystals shows that there exists a partial bandgap.
主要内容包括：第一章阐述了光子晶体概念，光子能带理论，带隙导光机理等，简要介绍了光子晶体的分类及应用方向。
The contents are as follows: In the first chapter, there is an illumination about the concept of photonic crystal, theory of photonic band, the mechanism of manipulating light, and so on.
目前尚未见有类似的报道，我们分析认为这是由于管束存在管间相互作用，电子的束缚度减小，改变了原来的能带结构，导致能隙减小。
The analysis indicates that the intertube coupling causes the energy gaps to decrease for the electrons in the rope are less conf…
氧终端表面能带向下弯曲，带隙较宽，带隙中不存在表面态。对两种终端金刚石薄膜的导电机理进行了讨论。
The results indicated that for the hydrogenated diamond surface, the surface energy bands bend downwards and there exists a shallow acce…
氧终端表面能带向下弯曲，带隙较宽，带隙中不存在表面态。对两种终端金刚石薄膜的导电机理进行了讨论。
The results indicated that for the hydrogenated diamond surface, the surface energy bands bend downwards and there exists a shallow acce…
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