应力试验后的样品，肖特基势垒接触界面模糊，有明显的互扩散和反应发生．。
The AES suggests that the interaction between gate metallization and GaAs active layer has taken place and the Schottky contact interface becomes ambiguous after stressing.
应力试验后的样品，肖特基势垒接触界面模糊，有明显的互扩散和反应发生．。
The AES suggests that the interaction between gate metallization and GaAs active layer has taken place and the Schottky contact interface becomes ambiguous after stressing.
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