且该电路结构中肖特基二级管可在NMOSFET漏极直接制作肖特基金半接触来方便地实现，工艺简明可行又无须增加芯片面积。
Also, the added schottky diode can be easily realized by schottky contact in the drain of the NMOSFET, which does not add chip area.
该肖特基二极管及其制造方法能够满足金属氧化物半导体工艺的需求，并适用于亚微米集成电路的集成生产。
The Schottky diode and the method of making same same can meet the requirements of metal-oxide-semiconductor process and be suitable for integrated production of sub-micro IC also.
该肖特基二极管及其制造方法能够满足金属氧化物半导体工艺的需求，并适用于亚微米集成电路的集成生产。
The Schottky diode and the method of making same same can meet the requirements of metal-oxide-semiconductor process and be suitable for integrated production of sub-micro IC also.
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