为了增加更多的死区时间，补偿功率管的切换瞬间短暂延时，增加了一个肖特基二极管，与栅极电阻。
The schottky diode bypasses the gate resistor in the gate discharge path, so that there is no falling edge delay. The delay at the rising edge adds dead time.
本文介绍了使用低势垒肖特基二极管(LBSD)作为检测微波信号功率元件的微波毫微瓦功率传感器。
Microwave nW power sensor USES low barrier schottky diode (LBSD) as a component for testing the power of microwave signals.
采用功率MOSFET取代普通二极管或肖特基二极管的同步整流技术，可以使低压大电流变换器的效率得到极大的提高。
Applying the synchronous rectifier technology in which MOSFET replaces common diodes or schottky diodes can increase the efficiency of low-voltage, great-current transformer.
采用功率MOSFET取代普通二极管或肖特基二极管的同步整流技术，可以使低压大电流变换器的效率得到极大的提高。
Applying the synchronous rectifier technology in which MOSFET replaces common diodes or schottky diodes can increase the efficiency of low-voltage, great-current transformer.
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