串连电阻是制约肖特基二极管响应速度的一个关键因素。
Series resistance is an important factor confining the response speed of Schottky barrier diode.
其它功能包括集成肖特基二极管、精确的LED电流匹配以及多输出能力。
Other features include integrated Schottky diodes, accurate LED current matching and multiple output capability.
每一路变换器都集成了一个主开关管和同步整流管以提高效率，无需外部肖特基二极管。
MP2109 Each converter integrates a main switch and a synchronous rectifier for high efficiency without an external Schottky diode.
为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。
To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device.
包括锗硅单层、多层结构的外延生长、以及金属诱导生长多晶锗硅和肖特基二极管原型器件的制备。
The research focused on the growth of SiGe single layer, multi-layers, metal induced growth of poly-SiGe, Schottky barrier diodes (SBDs) were fabricated.
使用肖特基二极管d1和D2，而不是普通二极管，为的是减少总线上低状态电压，改进噪声极限。
Using Schottky barrier diodes for D1 and D2 rather than common diodes reduces the low-level voltage on the bus, improving the noise margin.
为了增加更多的死区时间，补偿功率管的切换瞬间短暂延时，增加了一个肖特基二极管，与栅极电阻。
The schottky diode bypasses the gate resistor in the gate discharge path, so that there is no falling edge delay. The delay at the rising edge adds dead time.
本文介绍了使用低势垒肖特基二极管(LBSD)作为检测微波信号功率元件的微波毫微瓦功率传感器。
Microwave nW power sensor USES low barrier schottky diode (LBSD) as a component for testing the power of microwave signals.
主要产品有稳压二极管系列、肖特基二极管系列、三极管系列、场效应管系列、可控硅系列、IC产品系列。
The main product is zener diode series, schottky barrier diode series, Transistor series, MosFET series, controlled silicon series, IC series.
一隔离结构位于沟槽式栅极的底部并与沟槽式栅极绝缘，从而对沟槽式栅极与肖特基二极管两者提供屏蔽效应。
A shielding structure is disposed at the bottom and insulated from the trenched gate to provide shielding effect for both the trenched gate and the Schottky diode.
如果面板上有一个非常低的输出电压(小于33系列中的细胞)，这是一个优势，采用肖特基二极管，在这个地方。
If the panel has a very low voltage output (less than 33 cells in series), it is an advantage to employ a Schottky diode in this place.
采用功率MOSFET取代普通二极管或肖特基二极管的同步整流技术，可以使低压大电流变换器的效率得到极大的提高。
Applying the synchronous rectifier technology in which MOSFET replaces common diodes or schottky diodes can increase the efficiency of low-voltage, great-current transformer.
本文介绍了几种新型复合二极管，包括变容二极管、开关二极管、二极管阵列、阻尼二极管、调制二极管和肖特基二极管等。
In this paper, some new multiple diode, such as varicap diode, switching diode, diode array, damper diode, modulation diode and Schottky diode are discussed.
最后研究了两种新型的预失真器：二次混频预失真器和直接级联反向并联肖特基二极管对预失真器，并对后者进行了一定的改进。
Last we present two new pre-distortion, a pre-distortion using twice mixing operation and linearizer using anti-parallel Schottky diodes which are directly connected with pa.
我们生产和销售半导体设备，如标准整流器，快速整流器和超高速整流器，肖特基二极管，稳压二极管，TVS二极体和高压二极管。
We produce and sell Semiconductor Devices like Standard Rectifiers, fast Rectifiers and Ultrafast Rectifiers, Schottky Diodes, Zener Diodes, TVS Diodes and HV Diodes.
主要产品有：各类硅塑封整流二极管、开关二极管、高效率二极管、触发二极管、肖特基二极管、节能灯专用二极管、开关电源专用二极管。
The main products are: rectifier diodes, switching diodes, high efficiency diode, trigger diode, Schottky diode, electricity-saving lamps special diode, switching power supply special diode.
在整个测量范围内，肖特基检波二极管的压缩特性导致电场探头测量结果的非线性。
The compression characteristic of Schottky detector diode causes E-field probes highly non-linear over signal strength.
研制了三类不同金属和III族氮化物接触的肖特基势垒二极管。
Schottky barrier diodes with different metal on III nitride have been fabricated.
肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.
在分析4hsic肖特基势垒二极管正向电流热电子发射理论的基础上，计算了肖特基势垒高度？
Based on the thermionic emission theory of the current density of4h-sic schottky barrier diodes under the forward bias the calculations for the schottky barrier height?
在分析4hsic肖特基势垒二极管正向电流热电子发射理论的基础上，计算了肖特基势垒高度？
Based on the thermionic emission theory of the current density of4h-sic schottky barrier diodes under the forward bias the calculations for the schottky barrier height?
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