这种方法既不采用耗尽近似，也不忽略反型电荷对电势的影响，因而它是精确的。
As the method does not make depletion approximation nor ignores the influence of inversion layer charge on electric potential, it is thus exact.
提出了热及电场诱导的多载流子模型，在完全耗尽近似下，得出了耗尽区厚度和电场强度的计算公式。
Under the approximation of the full depletion, the calculating formulas for the width and electrical field of depletion region are obtained.
模拟计算还表明，对于薄硅膜的SOI结构，用耗尽 层近似推出的阈电压公式是一个简单和比较准确的公式。
The simulation shows that the expression of threshold voltage for SOI structure, using depletion approximation, is very simple and more accurate.
模拟计算还表明，对于薄硅膜的SOI结构，用耗尽 层近似推出的阈电压公式是一个简单和比较准确的公式。
The simulation shows that the expression of threshold voltage for SOI structure, using depletion approximation, is very simple and more accurate.
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