基于一款LED驱动芯片中耗尽型高压NLDMOS器件的参数要求，提出一种耗尽型高压NLDMOS的器件结构和参数设计优化方法。

Analyzing the parameters of the depletion-mode HV-NLDMOS used in a LED driver IC, the structure of DM-NLDMOS and optimal design method of its parameters were proposed.

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该电路采用耗尽型NMOS管作电流源器件，结合负反馈，实现了稳定的电压基准。

A depleted NMOS transistor, which was used as current source, and a negative feedback loop constitute a stable voltage reference.

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这种算法对增强(e-)和耗尽(D -)型MOS器件都适用，且避免了对泊松方程的严格数值求解。

The algorithm applies to both enhancement (e -) and depletion (d -) MOS and the strict solution of Poisson's equation by numerical method is avoided.

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这种算法对增强(e-)和耗尽(D -)型MOS器件都适用，且避免了对泊松方程的严格数值求解。

The algorithm applies to both enhancement (e -) and depletion (d -) MOS and the strict solution of Poisson's equation by numerical method is avoided.

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