设计和研制了耗尽型选择性掺杂异质结晶体管。
Depletion Model Selective doped heterojunction transistor is designed and fabricated.
该电路采用耗尽型NMOS管作电流源器件，结合负反馈，实现了稳定的电压基准。
A depleted NMOS transistor, which was used as current source, and a negative feedback loop constitute a stable voltage reference.
三维模型的特征一般用高维的特征向量表示，但是这会带来更多的计算量，从而使耗尽型搜索变得不可行。
We often use high-dimension feature vectors to achieve this goal, however, the large amount computation will make exhaustive retrieval infeasible.
基于一款LED驱动芯片中耗尽型高压NLDMOS器件的参数要求，提出一种耗尽型高压NLDMOS的器件结构和参数设计优化方法。
Analyzing the parameters of the depletion-mode HV-NLDMOS used in a LED driver IC, the structure of DM-NLDMOS and optimal design method of its parameters were proposed.
在部分耗尽型SOI结构中，SOI中顶层硅层的厚度为50-90nm，因此沟道下方的硅层中仅有部分被耗尽层占据，由此可导致电荷在耗尽层以下的电中性区域中累积，造成所谓的浮体效应。
In partially depleted SOI, the top layer is between 50- to 90-nm thick. Silicon under the channel is partially depleted of mobile charge.
这些恒星非常紧密地簇拥在一个直径大约150光年的球型空间里，他们在这个星团中旋转，直至生命耗尽。
These stars are packed so closelytogether in a ball, approximately 150 light-years across, that theywill spend their entire lives whirling around in the cluster.
现在，当一个非任务关键型应用程序耗尽（比如）一个进程中的所有线程，那么您的任务关键型解决方案将不会受到丝毫影响。
Now, when a non-critical application uses up, say, all of the threads within a process, your mission critical solutions will not be affected at all.
这种方法既不采用耗尽近似，也不忽略反型电荷对电势的影响，因而它是精确的。
As the method does not make depletion approximation nor ignores the influence of inversion layer charge on electric potential, it is thus exact.
提出了包括有限势垒高度下反型层量子化效应以及多晶硅耗尽效应在内的直接隧穿电流模型。
The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.
这种算法对增强(e-)和耗尽(D -)型MOS器件都适用，且避免了对泊松方程的严格数值求解。
The algorithm applies to both enhancement (e -) and depletion (d -) MOS and the strict solution of Poisson's equation by numerical method is avoided.
研究了在改性注氧隔离（SIMOX）材料上制备的具有环栅和H型栅结构的部分耗尽NMOS晶体管在三种不同偏置状态的总剂量辐照效应。
Total-dose irradiation effect of partially-depleted NMOS transistors with gate-all-around and H-gate structures fabricated on modified SIMOX was studied.
研究了在改性注氧隔离（SIMOX）材料上制备的具有环栅和H型栅结构的部分耗尽NMOS晶体管在三种不同偏置状态的总剂量辐照效应。
Total-dose irradiation effect of partially-depleted NMOS transistors with gate-all-around and H-gate structures fabricated on modified SIMOX was studied.
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