不同偏置电压的输入缓冲晶体管。
此外，缓冲层可以减少晶体管之间的设备和硅衬底平行的传导问题。
In addition, the buffer layer can mitigate parallel conduction issues between transistor devices and the silicon substrate.
此外，缓冲层地址和缓解晶格薄膜之间的不匹配而相对形成晶体管和硅衬底上。
In addition, the buffer layer addresses and mitigates lattice mismatches between the film relative to which the transistor is formed and the silicon substrate.
在变缓冲层高迁移率晶体管（MM_HEMT）器件中，二维电子气的输运性质对器件性能起着决定作用。
Transport properties of two-dimensional electron gas (2DEG) are crucial to metamorphic high-electron-mobility transistors (MM-HEMT).
上述特点使得作为在薄膜晶体管液晶显示器(TFT - LCD)的参考电压缓冲器的使用EL5221的理想选择。
These features make the EL5221 ideal for use as voltage reference buffers in Thin Film Transistor Liquid Crystal Displays (TFT-LCD).
上述特点使得作为在薄膜晶体管液晶显示器(TFT - LCD)的参考电压缓冲器的使用EL5221的理想选择。
These features make the EL5221 ideal for use as voltage reference buffers in Thin Film Transistor Liquid Crystal Displays (TFT-LCD).
应用推荐