它采用了绝缘栅极双极型二极管和电压型换流器，控制和运行方式简单，输出波形好，具有广阔的应用范围和良好的发展前景。
It can be widely used for its easy and simple control and operation as well as for its good output waveforms.
介绍了一种用大功率绝缘栅极双极型晶体管(IGBT)模块SKM75GA L 123d和驱动模块EXB840设计的直流升压斩波器。
A design of boost converter using high-power insulated bipolar transistor IGBT module named SKM75GAL123D and driver module named EXB840 is introduced.
特定来说，在非易失性存储器装置经历许多编程循环时，电荷变为俘获在浮动栅极与沟道区之间的绝缘体或电介质中。
In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.
开关元件可以形成于像素区域中的绝缘衬底上，像素区域由彼此相邻的栅极线和数据线限定。
The switching element may be formed on the insulating substrate in a pixel region defined by gate and data lines adjacent to each other.
栅极线和数据线可以形成于绝缘衬底上。
The gate and data lines may be formed on the insulating substrate.
栅极电极在栅极绝缘膜上形成，并具有侧壁。
The gate electrode is formed on the gate insulating film and has a sidewall.
该半导体器件的一种包括半导体衬底、公共栅极电极和栅极绝缘层。
A semiconductor device may include a semiconductor substrate, one common gate electrode, and one gate insulating layer.
半导体装置包括从基底突出的隔离层、分隔件、隧道绝缘层、浮置栅极、介电层图案和控制栅极。
The semiconductor device includes a isolated layer protruding from a substrate, a separator, a tunnel insulation layer, a floating grid, a dielectric layer pattern and a control grid.
每个晶体管可以由形成在半导体上的栅极绝缘层形成。
Each transistor may be formed from a gate insulating layer formed on a semiconductor.
栅极绝缘层可以是高k的材料。
栅极绝缘层置于所述栅极电极和所述半导体衬底的所述鳍之间。
A gate insulation layer may be interposed between the gate electrode and the fin of the semiconductor substrate.
本发明提供的场发射装置包括阴极和栅极。该阴极上设有至少一个电子发射端。该栅极与该电子发射端临近的表面上设有绝缘层。
The field emitting device of the present invention includes cathode with at least one electron emitting end and grid with insulating layer in the surface near the electron emitting end.
一隔离结构位于沟槽式栅极的底部并与沟槽式栅极绝缘，从而对沟槽式栅极与肖特基二极管两者提供屏蔽效应。
A shielding structure is disposed at the bottom and insulated from the trenched gate to provide shielding effect for both the trenched gate and the Schottky diode.
另外，形成一栅极材料层于绝缘层上。
Furthermore, a grid material layer is formed on the insulation layer.
所述半导体器件还包括沟槽栅极(32)，其通过绝缘层(33)面对部分所述中间区。
The semiconductor device further has a trench gate (32) facing a portion of the intermediate region via an insulating layer (33).
栅极电极完全围绕所述半导体衬底的所述鳍的至少一部分并与所述半导体衬底绝缘。
A gate electrode may surround at least a portion of the fin of the semiconductor substrate. The gate electrode may be insulated from the semiconductor substrate.
本发明还提供上述场发射装置的制造方法，包括采用蒸镀法在该栅极表面形成该绝缘层。
The present invention also provides the manufacture process of the field emitting device, and the manufacture process includes evaporation step to form the insulating layer on the surface of the grid.
本发明公开了一种下栅极式薄膜晶体管，包含栅极、栅极绝缘层以及微结晶硅层。
The invention discloses a lower grid electrode-based film transistor which comprises a grid electrode, a grid electrode insulating layer, and a micro-crystallization silicon layer;
本发明公开了一种下栅极式薄膜晶体管，包含栅极、栅极绝缘层以及微结晶硅层。
The invention discloses a lower grid electrode-based film transistor which comprises a grid electrode, a grid electrode insulating layer, and a micro-crystallization silicon layer;
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