逆变器采用绝缘栅双极晶体管模块制造。
The inverter can be manufactured with the insulation gate bipolar transistor module.
简要介绍了绝缘栅双极晶体管IGBT驱动保护电路的原则。
The principle of the driven and protection circuit for IGBT is briefly introduced.
硅绝缘栅双极晶体管(IGBT)技术在进步，成为更好和更便宜。
Silicon insulated-gate bipolar transistor (IGBT) technology is progressing, becoming better and cheaper.
本文提出互补横向绝缘栅双极晶体管CLIGBT的一种网络模型。
A new network model for the complementary lateral insulated-gate bipolar transistor CLIGBT is presented in this paper.
绝缘栅双极二级管(IGBT)作为一种可控开关，获得了广泛应用。
Insulated Gate Bipolar Transistor (IGBT) as controllable switch, has been applied widely.
一个适用于动态激活光电显示器的电路是由薄膜绝缘栅半导体器件构成的。
A circuit adapted to dynamically activate an electro-optical display device is constructed from a thin-film gate-insulated semiconductor device.
借助双极传输理论导出了高速绝缘栅双极晶体管(IGBT)传输特性的物理模型。
The high speed insulated gate bipolar transistor (IGBT) transport model is derived by ambipolar transport theory in this paper.
该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。
The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.
提出了一种用PSPICE程序模拟绝缘栅双极型晶体管(IGBT)特性的方法。
A method to simulate the characteristics of insulated gate bipolar transistor (IGBT) with PSPICE program is proposed in this paper.
轻型高压直流输电是在电压源换流器和绝缘栅双极晶体管基础上开发出来的一种新型输电技术。
The light HVDC transmission is a new power transmission technology based on the voltage source converters(VSCs) and IGBT power semiconductors.
针对手工焊条电弧焊(MMA)弧焊过程特点，建立了绝缘栅型晶体管逆变式弧焊电源控制系统。
Based on the characteristics of MMA welding process, a new control system of IGBT inverter arc welding power source is developed.
本发明提供一种绝缘栅双极晶体管(IGBT)，所述绝缘栅双极晶体管占据小面积并且抑制热击穿。
Provided is an insulated gate bipolar transistor (IGBT) which occupies a small area and in which a thermal breakdown is suppressed.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
本系列产品使用32针微处理器和绝缘栅双极型晶体管，具有电动机运行不发出噪声、高效、低速等性能特点。
Using a 32-bit microprocessor and insulated gate bipolar transistors, the M-Max series provides quiet motor operation, high efficiency and smooth, low-speed performance.
绝缘栅双极型晶体管(IGBT)是应用广泛的功率半导体器件，驱动器的合理设计对于IGBT的有效使用极为重要。
Isolated gate bipolar transistors (IGBTs) are widely used power semiconductor devices. Properly designed drivers are extremely important for the effective use of IGBTs.
本文在分析了IGBT（绝缘栅双极晶体管）特性的基础上，设计了一台容量为2KVA、频率为20KHZ的高频逆变电源。
This paper has designed a inverter power supply of volume 2KVA, working frequency 20KHZ. , based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).
本文提出空穴注入控制型横向绝缘栅双极晶体管(CILIGBT)，可有效控制高压下阳极区空穴注入，提高器件的抗闩锁性能。
Controlled hole injection LIGBT (CI LIGBT) is proposed in the paper, which can effectively control the hole injection with high anode voltage, and its latch up free characteristics can be improved.
研究了栅绝缘层的薄膜厚度对器件的电性能的影响。
The thickness of gate insulator can also influence the device performance.
所述DRAM进一步包括与所述表面绝缘的浮栅，且位于所述第一区域和 所述第二区域之间。
The DRAM further has a floating gate insulated from the surface and is positioned between the first region and the second region.
灭蚊灯主要由引诱灯、高压栅、绝缘保护栅组成。
This lamp had three main parts, Lure lamp, High voltage palisade and Insulation protective palisade.
在浮栅的两侧壁上，设置侧壁绝缘膜。第一杂质扩散层设置在半导体基板内，并与浮栅仅离规定的距离。
A first impurity diffusion layer, which occupies a space within the semiconductor substrate, is provided separately apart from the floating gate by a predetermined distance.
与此同时，制备高质量的栅绝缘层用氮化 硅薄膜也是制备高性能薄膜晶体管（TFT）这一课题的需要。
On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.
与此同时，制备高质量的栅绝缘层用氮化 硅薄膜也是制备高性能薄膜晶体管（TFT）这一课题的需要。
On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.
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