传感器利用注入结电流直接调频的半导体激光(LD)产生外差干涉，从而实现了干涉相位的线性检测。
A heterodyne interference is caused by a frequency modulation of a laser diode (LD) with a ramp injection current, and a linear phase detection is realized.
这种叫做反向偏置的状态不利于电流穿越结。
This condition, known as reverse bias, is not conducive to current flow through the junction.
镀层结构中有结金，消耗掉部分电流。
Coating structure with the knots gold, off part of the current.
该技术充分利用了PN结反向饱和电流是温度敏感函数的特性，使用简单的电路结构，达到了很好的温度特性和电源抑制性能。
The sensitive temperature characteristics of PN junction inverse saturation current is fully utilized to obtain good temperature coefficient and PSRR with simple circuit structure.
计算表明临界电流极强地依赖于两个晶体和结的相对取向，并在某些特殊的相对取向变为零。
The critical current depends strongly on the relative orientations among the two crystals and the junctions, vanishing in some special relative orientations.
一种新型的约瑟夫森结阵列使用了电流偏置的电压台阶可以提供高稳定度、高准确度的电压标准。
A new type of Josephson junction array using current biased voltage steps can provide highly stable and accurate voltages.
实验结果指出，器件的电流放大系数器件大j、3结特性硬，无效触发分流小，可有效地缩短开通时间。
The experiment shows that if the current amplifier factor is big, Junction J_3 is hard and the ineffective trigger branch current is low, the turn-on time can be shorten effectively.
运用半导体的PN结扩散电流与电压关系特性，精确地测量了玻尔兹曼常数。
Based on the relationship between the diffusion current and voltage of PN junction, the Boltzmann's constant is measured with high accuracy.
超导弱连接在外源作用下，一般能简化为由电流源驱动的电阻分路约瑟夫森结模型。
In the presence of external sources, a superconducting weak link can be represented by a simplified model, consisting of a resistively shunted Josephson junction driven by a current source.
在该模型的基础上，讨论了势垒、阳极结的电势降落和电流的放大因子等电参数的变化。
Based on the model, the variations of the electrical parameters such as the potential barrier, the anode junction voltage drop, and the current amplification factor are studied and discussed.
温度越高，发射结正向压降v _ (BE)变化相同数值所对应的输入电流i_f的变化越小。
The temperature is higher, the change of input current I_F according to the same change in value of the base-emitter voltage V_ (BE) is smaller.
如果给定结两侧的电压就可以求出通过隧道结的总电流。
The total amount of current through the junction can be calculated by giving a fixed voltage at the sides.
在结半径比较小的情形给出电流密度分布、磁场强度分布以及临界电流值的近似解析公式。
Approximate analytic solutions of cur-rent and magnetic field distribution and the critical current are obtained when the radius of the junction is very small.
平面条形双异质结激光器的模式和阈值电流特性可以用两维波导模型来分析。
The mode and the threshold current characteristics of planar stripe geometry DH lasers can be analyzed by two-dimensional waveguide model.
与通常使用的PN结二极管模型不同，本文模型考虑了并联电导对电流的影响。
Differing from the usual model, the present model of PN diode consists of the effect of shunt conductance on the current.
玻璃钝化结整流。最大重复峰值反向电压600V最大平均正向整流电流1.0A。
Glass passivated junction rectifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 1.0 a.
从而修正了双结色敏器件中光生电流分配的传统理论，得到更符合电流实际分配情况的结果。
So the conventional theory on the current distribution is revised, and we get the result which accords with the practical current distribution.
本文考虑了各项隧道电流，以一个相位锁定环路模拟约瑟夫逊隧道结。
An electronic analog model to simulate the properties of Josephson tunnel junction is described in this paper.
根据理论分析，修正了反偏pn结漏电流理论。
Leakage current theory for reverse PN junction is modified on the basis of theoretic analysis.
用两个重叠的铅隧道结进行实验，当注入电流很大时在铅膜中观察到了非均匀能隙态，铅膜中出现非均匀态的功率阈值比铝膜大得多。
Double tunnel junctions have been used to investigate the properties of superconducting Pb films under quasiparticle injection. At high injection level an inhomogeneous gap state was observed.
计算结果表明在单异质结电致发光器件中，可降低器件的电流水平，提高器件的发光效率。
The enhancement of the minority results in the improvement of luminescent efficiency with the reduction of majority injection resulting in the falling of current level.
最后，我们的模拟发现，普通soi结构SBSD - MOSFET能有效阻挡来自源结的热电子发射泄漏电流，但仍不能阻挡来自漏结的隧穿泄漏电流。
Finally, our simulation result shows that conventional SOI SBSD-MOSFET can effectively suppress thermionic emission leakage current, but it still can not suppress tunneling leakage current.
辐照后基极电流、结漏电流增大，集电极电流、击穿电压减小。
The base current and the junction leakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation.
系统分析了小尺寸半导体器件中的载流子非本地输运模型，重点研究了非均匀能带结构和异质结效应对输运电流密度的影响。
This paper analyzes the carrier non local transport model of small size semiconductor devices and studies the influences of nonsymmetrical band structure and heterogeneous effect on emphasis.
本发明的有益效果是：该方法获得的异质结器件具有很好的整流比、高电流密度的特点。
The invention has the advantages that the heterojunction device acquired by the method has the characteristics of good rectification ratio and high current density.
模拟分析表明 ，采用该结构 ，器件的雪崩击穿电压能提高到理想平行平面结的 90 %以上 ，器件的大电流特性和频率特性也有所改进 。
The simulation analysis indicates that with this structure the avalanche breakdown voltage of RF power transistors can be increased to be over 90% of that for an ideal parallel .
模拟分析表明 ，采用该结构 ，器件的雪崩击穿电压能提高到理想平行平面结的 90 %以上 ，器件的大电流特性和频率特性也有所改进 。
The simulation analysis indicates that with this structure the avalanche breakdown voltage of RF power transistors can be increased to be over 90% of that for an ideal parallel .
应用推荐