硅在半导体元件要单结晶：它需要有一个非常纯净的晶体形式，如果没有缺陷的晶体结构。
The silicon in semiconductor components has to be mono crystalline: it has to have a very pure crystal form without defects in the crystal structure.
在拉速提高的条件下，必须优化结晶器内流场以适应稳定生产的需要，防止气孔、拉漏等铸坯缺陷的产生。
Fluid flow in the mould must be optimized in order to improve the internal and surface quality of the slabs while increasing the casting speed.
结晶器铜管在引仲加工过程中，由于凹模中心线与机床运动方向轨迹线不同，造成加工干涉和产品缺陷。
In the course of drawing process, the process interference and defect take place because of the difference between the centerline of concave die and the trace of moving direction.
采用倒角结晶器及连铸弱冷工艺、提高轧件边角部温度可以有效抑制管线钢边部缺陷的产生。
The adoption of the chamfered mould, slow cooling in CC and increasing the edge and corner temperature could effectively suppressed the edge defect of pipeline steel.
再结晶温度以上，材料内部缺陷损伤与修复的作用效果对塑性变形能力具有重要影响。
The effect of damage and fault healing has the great influence on the plasticity in materials over the recrystallization temperature.
随牵伸速率的增大，LDPE相结晶度出现先增加后减小的变化，晶体缺陷增多。
The crystallinity of LDPE increased firstly and decreased later and the crystal defects might increase as drawing rate increased.
随着再结晶次数的增加，晶体中的杂质浓度和缺陷浓度明显降低，晶体的耐辐射性能明显提高。
The concentration of impurity and defects in the crystals decreased dramatically, and the capability of irradiation-resistant improved synchronously as the increase of re-crystallization times.
利用结晶过程的传热学原理，分析了铸轧板表面产生横向波纹的原因，探讨了影响缺陷产生的多种因素，提出了预防缺陷产生的措施。
According to the diathermanous principle in crystallizing, the cause of transverse waves on the surface of cast-rolled plate was analyzed, and the effective factors were discussed.
硅化物可以提供用于结晶化的模板，降低了硅的缺陷密度并且提高了其导电性。
The silicide may provide a template for crystallization, decreasing the defect density of the silicon and improving its conductivity.
结果表明，在相同的结晶条件下各类晶体缺陷在多晶硅锭的同一横截面上呈均匀分布，但在沿结晶生长方向上不同部位存在较大差异；
The results showed that the distribution of dislocations and twins in the same cross section is even, but their density varied along the axis direction of the polysilicon ingot.
结果表明：晶界氧化夹杂和铸造、锻造造成的组织缺陷是引起结晶器铜套快速失效的主要原因。
The results show that oxide inclusion in grain boundary and structure defects from casting and forging process are the main reasons for failure of the copper sleeve.
并对晶须生长过程中所形成的各种晶体缺陷进行了分析，提出了解决办法。同时对羟基磷灰石晶须针状生长的结晶学和界面动力学机理进行了探讨。
The paper also analyzed the crystal defeat formed in the process of growth and put forward to the solution, furthermore, the mechanism of needle - like growth was discussed.
然后执行热处理步骤，以便使有缺陷的半导体晶体材料的非晶化区域再结晶。
A thermal treatment step is next performed so as to recrystallize the amorphized region of the defective semiconductor crystal material.
通过实际生产从工艺角度分析了底注法生产窄结晶温度范围高强度黄铜时夹杂、缩孔缺陷的产生机理。
The mechanism of the inclusion and shrinkage cavity in high-strength brasses produced by bottom running method was analyzed from the point of view of production technology.
采用原位分析技术对不同结晶态的低合金钢连铸方坯的成分分布、偏析、疏松、夹杂和其他缺陷进行了分析。
The central segregation of continuously cast slab of 10CrNiCu steel and its effect on mechanical properties were studied by original position analysis(OPA).
采用原位分析技术对不同结晶态的低合金钢连铸方坯的成分分布、偏析、疏松、夹杂和其他缺陷进行了分析。
The central segregation of continuously cast slab of 10CrNiCu steel and its effect on mechanical properties were studied by original position analysis(OPA).
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