与通常使用的PN结二极管模型不同，本文模型考虑了并联电导对电流的影响。
Differing from the usual model, the present model of PN diode consists of the effect of shunt conductance on the current.
通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c -V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。
It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.
本文以带有隧道穿透的PN结雪崩倍增理论，研究了微波固体噪声二极管。
The microwave solid state noise diodes are investigated based on the PN junction avalanche multiplication theory with tunneling penetration.
一种半导体二极管阵列，通过熔断或烧断二极管的结来实现编程过程。
A semiconductor diode array that is program med by fusing or burning out diode junctions.
一种半导体二极管阵列，通过熔断或烧断二极管的结来实现编程过程。
A semiconductor diode array that is programmed by fusing or burning out diode junctions.
方法：该电路利用二极管的结电压随温度变化的特性实现呼吸信号的检测。
Methods the respiratory signal is detected by the characteristics of diode junction voltage with temperature changes.
一个普通的硅整流二极管是由p - n结组成，这个结的p层是阳极。
An ordinary silicon rectifier diode consists of ap-n junction of which the player is the anode.
本文详尽地讨论了砷化镓超突变结变容二极管的设计原理和方法。
In this paper, the design principles and methods of the super-abrupt junction GaAs varactor diode has been discussed.
平面型雪崩光电二极管(APD)在结弯曲处具有高的电场，导致在结边缘的提前击穿。
The edge pre-breakdown of planar-type avalanche photodiode (APD) is resulted from the intense electric field at the junction bend.
本发明还涉及所述有机复合物p -N的制备方法及应用所述有机复合物p - N结的有机复合物二极管。
The invention also relate to a method for preparing the organic composite P-N and an organic composite diode thereof.
所以，如果做同样的事情使用的SCR作为一个简单的结型二极管？
Why use an SCR if it does the same thing as a simple junction diode?
本文提出了一种重结光电二极管结构。
二极管是由一个PN结加上相应的引出端并封装管壳构成的。
Semiconductor diode is a PN junction together with the corresponding client leads and package composition shell.
半导体结型二极管包括硅，所述硅与硅化物相接触时结晶化。
The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide.
用N型硅单晶材料制作了点状PN结光电二极管，对二极管的光电参数进行了测量。
The point type PN junction photodiodes of silicon are fabricated, and the photoelectric parameters of photodiode are measured.
比较了纯PN结雪崩二极管和带有隧道穿透的PN结雪崩二极管的噪声功率谱密度。
The spectral noise power density of pure avalanche diodes is compared with that of avalanche the diodes with tunneling penetration.
比较了纯PN结雪崩二极管和带有隧道穿透的PN结雪崩二极管的噪声功率谱密度。
The spectral noise power density of pure avalanche diodes is compared with that of avalanche the diodes with tunneling penetration.
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