首次对薄膜SOI功率器件的击穿电压与线性掺杂漂移区的杂质浓度梯度的关系进行了实验研究。
The dependence of breakdown voltages of the thin film SOI devices on the concentration gradient in the linearly doped drift region is experimentally investigated for the first time.
该模型可用于薄外延阶梯掺杂和线性掺杂漂移区RESURF器件的设计优化。
This analysis model is available for the design of step drift doping profile RESURF device and linearly-graded drift RESURF device.
给出了漂移区为线性掺杂的高压薄膜soi器件的设计原理和方法。
Principle and method for designing high voltage thin film SOI devices with linearly doped drift region are given.
给出了漂移区为线性掺杂的高压薄膜soi器件的设计原理和方法。
Principle and method for designing high voltage thin film SOI devices with linearly doped drift region are given.
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