主要结论为通过合理地安排工艺步骤，能够在对原有结构不产生影响的情况下，得到性能令人满意的纵向PN P晶体管。
Major conclusion is: it is possible to achieve ideal vertical PNP transistor by appropriately re-arranging process steps without affecting the original structure.
基于上述分析，在对传统的结构进行修改之后，以增加工艺复杂性为代价，在保证原有结构的情况下，能够得到性能令人满意的纵向PN P晶体管。
Per above said, it is possible to improve PNP transistor by modifying the existing structure, increasing process complexity while maintaining original device's performance.
本研究对生产实际的指导意义在于，有效的提供了一种半导体集成电路制造工艺，能够同时提供纵向NPN晶体管，纵向PN P晶体管以及横向PN P晶体管。
The significance of this article is to propose an effective semi-conductor IC manufacturing process that provides vertical NPN, vertical PNP and lateral PNP transistors.
本发明的实施例涉及作为发光晶体管的纵向场效应晶体管。
Embodiments of the invention relate to vertical field effect transistor that is a light emitting transistor.
本发明的实施例涉及作为发光晶体管的纵向场效应晶体管。
Embodiments of the invention relate to vertical field effect transistor that is a light emitting transistor.
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