计算机软件模拟被用来分析抗穿通离子注入中离子束精度偏差对半导体器件（低至36纳米结器件）的影响。
The Computer Software Simulation is used to analyse the effect of punchtrhough stop implantation precision on the performance of MOSFET device (low to the 36nm junction device).
计算机软件模拟被用来分析抗穿通离子注入中离子束精度偏差对半导体器件（低至36纳米结器件）的影响。
The Computer Software Simulation is used to analyse the effect of punchtrhough stop implantation precision on the performance of MOSFET device (low to the 36nm junction device).
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