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通过深紫外光刻和感应耦合等离子刻蚀设备,制备了所设计的器件。
The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching.
youdao
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通过深紫外光刻和感应耦合等离子刻蚀设备,制备了所设计的器件。
The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching.
youdao