通过深紫外光刻和感应耦合等离子刻蚀设备，制备了所设计的器件。

The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching.

youdao

通过深紫外光刻和感应耦合等离子刻蚀设备，制备了所设计的器件。

The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching.

youdao