通过深紫外光刻和感应耦合等离子刻蚀设备，制备了所设计的器件。
The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching.
利用并行直写技术与感应耦合等离子刻蚀技术制作了部分二元光学元件。
Some binary optical elements were manufactured by parallel direct writing and inductive couple plasma etching technology.
然后在氧等离子体中用电子束刻蚀法去除沟道区石墨烯形成晶体管的沟道。
They then defined the transistor channel using electron-beam lithography, removing graphene outside of channel regions with an oxygen plasma.
我们同时对反应离子刻蚀工艺中的等离子体充电效应和离子轰击对氧化硅造成的损伤进行了讨论。
At the same time, the influence of plasma charging and ion bombardment on the quality of silicon oxide are analyzed.
因此，等离子体刻蚀的各向异性可以通过增加射频频率和射频功率来改善。
Therefore, plasma etching anisotropy can be improved by increasing rf frequency or rf-bias power.
本文介绍微波等离子体刻蚀应用的实验结果。
In this paper, the result of etching application with microwave plasma will be introduced.
用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。
The optical emission spectrum of r. f. plasma during amorphous silicon based film etching in CF4 gas is detected.
研究结果表明，低温等离子体表面改性处理能够刻蚀牦牛毛纤维表面的鳞片，而且空气等离子体的刻蚀效果优于氧等离子体的刻蚀效果；
The results reflect that treated by low temperature plasma processing the surface squama of yak hair is etched and the effect of air plasma is better than that of oxygen plasma.
等离子体低温刻蚀是一种针对高深宽比结构的干法刻蚀技术。
High aspect ratio structures have been successfully fabricated by plasma cryo-etching on silicon wafers.
本文对比了用氩等离子体和氧等离子体预刻蚀电极的情况，认为在电极表面是否有含氧基团存在对氩等离子体聚合制备修饰电极影响不大。
The effects of etching electrode with argon and oxygen plasmas in advance on the preparation of argon plasma polymerized vinylferrocene film electrode were compared.
提出一种基于等离子体刻蚀的技术，形成减反射表面结构。
A technology based on plasma etching has been developed to produce antireflective surface structures.
本文作者认为等离子体轰击高聚物表面引起的局部高温是离子刻蚀后试样表面出现伪迹的重要原因。
The authors think that the high temperature on polymer local surface produced by ion bombardment is the main cause of artifacts on sample surface treated by ion-etching.
采用感应耦合等离子体刻蚀技术实现了不同形状和几何参数的规则织构化硅片表面的构筑与制备。
Regular textured silicon surfaces with various shape and different geometrical parameters were successfully designed and prepared using inductively coupled plasma (ICP) etching technology.
本文简要介绍了微波ECR等离子体技术的原理，评述了近年来这种技术在CVD、PVD、刻蚀等方面的研究和应用的进展。
Principles of microwave ECR plasma technology are introduced briefly. Present development of it'S research and applications in system manufacturing, CVD, PVD and etching is reviewed.
结果表明，氨等离子处理会对膜表面产生一定的刻蚀作用，从而影响膜表面的粗糙度及氨基接枝密度；
The results showed that plasma treatment would etch film surface, which would affect the roughness of film surface and the density of grafted ammonia group.
采用微波电子回旋共振等离子体反应离子刻蚀（E CR-R IE）装置对牦牛毛纤维进行表面改性，从而改善牦牛毛的可纺性。
Yak hairs were treated by the microwave electron cy cl otron resonance plasma reactive ion etching(ECR-RIE) equipment to improve its property of weave.
利用低温等离子体处理纤维可以在纤维表面形成刻蚀、改性等物理化学变化，但对纤维自身的性能也有所影响。
The fibers treated with low-temperature plasma, have some physical and chemical change in the surface of the fiber such as carving, modification. But there are affections in fibers' properties.
本发明探针诱导光刻薄膜用于探针诱导表面等离子体共振光刻将大大降低刻蚀线宽。
When the probe inducing photoetching film is used for probe inducing surface plasma resonance photoetching, the corrosion linewidth is greatly reduced.
利用该等离子体在优化的气压条件下对化学气相沉积金刚石膜进行了刻蚀， 并研究了刻蚀机理。
The etching of CVD diamond thick films was accomplished by the ECR plasma under optimized pressure conditions and the etching mechanism is studied.
利用电子束光刻、等离子体增强化学气相沉积、感应耦合等离子体刻蚀来实现跑道型微环谐振器的制备；
The optical part can be done by applying Electron Beam Lithography (EBL), Inductively Coupled Plasma (ICP) etching, and Plasma-enhanced Chemical Vapor Deposition (PECVD).
利用电子束光刻、等离子体增强化学气相沉积、感应耦合等离子体刻蚀来实现跑道型微环谐振器的制备；
The optical part can be done by applying Electron Beam Lithography (EBL), Inductively Coupled Plasma (ICP) etching, and Plasma-enhanced Chemical Vapor Deposition (PECVD).
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