本文叙述了辉光放电等离子体源的等离子体源离子注入。
In this paper, a glow discharge plasma source ion implantation technique is described.
这一分析方法对实际等离子体源离子注入应用具有重要的指导作用。
This method would be very helpful to the design of practical plasma source ion implantation processes.
等离子体源离子注入技术是一种新型的非视线的离子注入材料表面改性技术。
Plasma source ion implantation is a new non-line of sight ion implantation technique for surface modification of materials.
采用等离子体源离子注入方法，将氮离子注入纯铁粉中，对样品进行穆斯堡尔谱研究。
Mssbauer measurements have been carried out for pure iron powder samples, the whose surface was implanted with nitrogen ions by plasma source ion implantation techniques.
等离子体源离子注入装置由脉冲负高压源系统、热阴极弧放电系统、真空室及样品台、真空系统和监测系统等五部分组成。
The plasma source ion implantation device consists of pulsed negative high voltage power, hot cathode arc discharge system, vacuum chamber and target stage, vacuum system and monitor system.
本发明涉及离子注入机imp，包括脉冲等离子体源spl、衬底支承台PPS和所述台的电源alt。
The invention relates to an ion implanter (imp) comprising a pulsed plasma source (SPL), a substrate support plate (PPS) and a power supply (ALT) for said plate.
本发明涉及离子注入机imp，包括脉冲等离子体源spl、衬底支承台PPS和所述台的电源alt。
The invention relates to an ion implanter (imp) comprising a pulsed plasma source (SPL), a substrate support plate (PPS) and a power supply (ALT) for said plate.
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