采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).
利用微波ecr等离子体增强磁控溅射沉积技术在玻璃表面制备了硅膜。
The silicon thin films on glass substrate were prepared using microwave ECR plasma source enhanced magnetron sputtering.
利用等离子体增强化学气相沉积（PECVD）工艺，在不同射频功率，不同反应气压条件下制备了氮化硅薄膜。
SiN thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) under various power and pressure conditions.
以硅烷和氧化二氮作为反应气体，采用等离子体增强化学气相沉积(PECVD)技术，不使用掺杂，在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。
Without doping, plasma enhanced chemical vapor deposition (PECVD) of silica films on si substrates with gas mixtures of SiH_4 and N_2O is considered.
传统等离子体增强化学气相沉积(PECVD)技术，工艺成熟，制备的薄膜质量高，较适合大规模工业化生产。
For the high technical maturity and the high deposition quality, traditional plasma enhanced chemical vapour deposition (PECVD) technology was wide applied in the large-scale industrial production.
采用甚高频等离子体增强化学气相沉积技术成功地制备了不同硅烷浓度和辉光功率条件下的微晶硅电池。
Microcrystalline silicon solar cells with the variation of silane concentration (SC) and discharge power were fabricated by very high frequency plasma-enhanced chemical vapor deposition.
本文基于产业化应用和改善类金刚石膜与基体结合力为目的，在大型工业用等离子体—离子束增强沉积系统中，获得了DLC膜和梯度复合dlc膜。
DLC films and gradient composition DLC films were deposited on si substrates in plasma-ion beam enhanced deposition system for the industrial applications and improving the adhesion.
研究结果表明：用射频等离子体增强化学气相沉积法，可以在PET上沉积厚度为纳米至微米级的非晶碳氢膜。
The results show: the amorphous hydrogenated carbon film can be fabricated on PET surface by plasma-enhanced chemical vapor deposition.
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
Microcrystalline silicon thin films prepared at different deposition parameters using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD).
采用射频等离子体增强化学气相沉积法(RF - PECVD)在钢衬底上沉积氮化硅薄膜。
Silicon nitride thin films were prepared onto steel substrates by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique.
利用电子束光刻、等离子体增强化学气相沉积、感应耦合等离子体刻蚀来实现跑道型微环谐振器的制备；
The optical part can be done by applying Electron Beam Lithography (EBL), Inductively Coupled Plasma (ICP) etching, and Plasma-enhanced Chemical Vapor Deposition (PECVD).
利用电子束光刻、等离子体增强化学气相沉积、感应耦合等离子体刻蚀来实现跑道型微环谐振器的制备；
The optical part can be done by applying Electron Beam Lithography (EBL), Inductively Coupled Plasma (ICP) etching, and Plasma-enhanced Chemical Vapor Deposition (PECVD).
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