高气压非平衡等离子体化学具有极其广阔的应用前景。
Non equilibrium plasma chemistry at high pressure has wide application prospects.
以镍为催化剂，利用微波等离子体化学气相沉积法制备了弹簧状碳纤维。
Under the catalytic effect of nickel particles, spring-like carbon filaments were synthesized through microwave plasma chemical vapor deposition.
以镍为催化剂，利用微波等离子体化学气相沉积法制备了弹簧状碳纤维。
The globe-like diamond microcrystalline aggregates were fabricated by microwave plasma chemical vapor deposition (MPCVD) method.
为快速沉积高品质金刚石膜，建立了热阴极等离子体化学气相沉积方法。
Hot cathode chemical vapor deposition method was established in order to deposit high-quality diamond films with high deposition rate.
射频辉光放电硅烷等离子体化学汽相沉积是制备氢化非晶硅薄膜的主要工艺技术。
Plasma chemical vapor deposition in silane radio frequency glow discharge is a main fabrication technology of hydrogenated amorphous silicon (a-Si: h) films.
以镍片为基板材料，利用微波等离子体化学气相沉积法在低温条件下合成了纳米碳管膜。
Carbon nanotube films were synthesized on Ni substrate by microwave plasma chemical vapor deposition at low temperature.
沉积在电介质表面的电荷主要是能量较高的电子，它们显著地影响着等离子体化学过程；
These charges on dielectric surface are mostly high energy electrons, which affect plasma chemical reaction observably;
在微波等离子体化学气相沉积金刚石膜时，采用负偏压使氢和硼离子轰击金刚石膜表面。
The hydrogen and boron ion bombardments were performed by applying a negative bias voltage to the substrate during microwave plasma chemical vapor deposition process.
等离子体化学气相沉积技术制备氢化硅薄膜工艺条件成熟稳定而成为薄膜制备的首选方法。
Plasma enhanced chemical vapor deposition (PECVD) technique is the primary method which is used to prepare hydrogenated silicon film.
本文研究了七种芳香族碳氢化合物的气相IR激光化学，主要是等离子体化学。实验说明。
IR laser chemistry (mainly plasma chemistry) of gaseous aromatic hydrocarbons was studied with a pulsed TEA-CO_2 laser.
本论文通过对反应器结构的改进，成功地研制出了大气压反常辉光放电等离子体化学反应器。
In this dissertation, through some improvements of conventional reactor structure, a new abnormal glow discharge plasma chemical reaction apparatus under atmospheric pressure has been invented.
利用微波等离子体化学气相沉积(CVD)设备，在硅基片上进行了金刚石薄膜的沉积实验。
The experiment of the deposition of diamond thin films is made on silicon substrate by using microwave plasma chemical vapor deposition (CVD) system.
利用非等温等离子体化学气相沉积成功制得了具有折射率中心下陷的负色散光纤(rdf)。
Reverse dispersion fiber (RDF) with depressed-core index profile is fabricated successfully by using plasma-activated chemical vapor phase deposition.
大电流热阴极辉光放电用于等离子体化学气相沉积金刚石膜，有效地提高了沉积速率和膜品质。
Large current hot cathode glow discharge was used for plasma chemical vapor deposition of diamond films. It improved deposition rate and films quality efficiently.
直流热阴极辉光放电等离子体化学气相沉积法是我们建立的快速沉积高品质金刚石膜的新方法。
Direct current hot cathode plasma glow discharge chemical vapor deposition (DC-HCPCVD) is a new method to deposit high quality diamond films with high growth rate.
介绍了等离子体化学工艺，特别着重介绍了溅射镀膜与等离子体化学气相沉积在粉末冶金中的应用。
This article introduces processing of plasma chemistry and application of sputter coating and plasma-enhanced chemical vapor deposition in powder metallurgy especially.
本文介绍了用射频等离子体化学气相沉积的方法，在硅基底上制备得到具有优异性能的非晶态碳膜。
In this paper, the rf plasma deposited method has been reported. On the silicium substratum, the amorphous carbon film with excellent properties have been made.
利用螺旋波等离子体化学气相沉积(HWP - CVD)技术，以氢气为反应气体产生等离子体。
The hydrogen plasma was excited by the technology of helicon-wave plasma chemical vapor deposition (HWP-CVD).
从宏观粒子和微观粒子的输运现象及等离子体化学入手 ，建立了宏观粒子沉降过程中的纯化模型 。
The purification model of macroscopic particles in descending process is established from the transport phenomena of particles and plasma chemicals.
研究了直流等离子体化学汽相沉积（CVD）法合成的金刚石膜内应力随甲烷浓度、沉积温度的变化关系。
The internal stress in diamond thin films deposited by DC plasma CVD was studied as a function of methane concentration and deposited temperature.
在微波等离子体化学气相沉积装置中，研究了负偏压形核对金刚石薄膜与WC 6 %硬质合金刀具附着力的影响。
The influence of bias enhanced nucleation(BEN) to the adhesion between diamond coating and WC-6%Co carbide cutting tool is researched with the microwave plasma (CVD) instrument.
研究了在热阴极辉光放电等离子体化学气相沉积金刚石膜过程中，热阴极辉光放电特性与金刚石膜沉积工艺的关系。
The relation between characteristics of hot cathode glow discharge and diamond film deposition techniques in hot cathode glow discharge plasma chemical vapor deposition process was discussed.
应用等离子体化学反应并结合物理手段较方便地获得了金属离子束，特别是解决了高挥发温度金属离子束的获得问题。
By means of plasma chemistry reaction combined with physics, metal ion beams, especially the beams of high volatility temperature, are obtained easily.
利用微波等离子体化学气相沉积方法，以H 2、CH4和八甲基环四硅氧烷(D4)为原料，在硬质合金基体上沉积了金刚石涂层。
Diamond coatings were deposited on cemented carbide substrates with H2, CH4 and D4 as precursors by using microwave plasma chemical vapor deposition technique.
由于传统的DBD在气体电离方法方面存在许多问题，致使大气压条件下放电空间内气体的电离度很低，无法满足非平衡等离子体化学工程的需要。
There are many unsolved problems in conventional DBD gas ionization technique, resulting in lower gas ionizability, which cannot be used in non-equilibrium plasma chemistry.
废物（如果是固体则切割成小块）被放入等离子体化的空气中，等离子体的热能和电荷会将废物组织的化学键打破，从而使之蒸发消失。
Waste (chopped up into small pieces if it is solid) is fed into this plasma. The heat and electric charges of the plasma break the chemical bonds in the waste, vaporising it.
提出了一种新颖的多孔硅表面钝化技术，即采用微波等离子体辅助的化学气相沉积（MPCVD）方法在多孔硅上沉积金刚石薄膜。
A novel passivation technology of porous silicon (PS) surface, i. e. , depositing diamond film on the PS surface by microwave plasma assisted chemical vapor deposition (MPCVD) method, was developed.
介绍了低温等离子体的基本概念及其在化学合成中的应用。
Basic conception of low temperature plasma and its application in the chemical synthesis are described.
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).
应用推荐