讨论窄禁带半导体带间光吸收跃迁的理论和实验。
The theoretical and experimental aspects of inter-band optical transitions are discussed for narrow gap semiconductors.
光电跃迁效应是窄禁带半导体红外探测器的基本物理过程。
Optical transition effect is a fundamental physical process in the narrow gap semiconductor infrared detectors.
本文改进了半导体两带模型，计算了窄禁带半导体的非线性极化率。
The two-band model is improved and the nonlinear susceptibility of narrow gap semiconductors are calculated in this paper.
本文主要论述窄禁带半导体碲镉汞的带间光吸收跃迁的理论和实验。
This paper reviews the research progress in both theoretical and experimental aspects of band-to-band optical absorption transition effect in narrow gap semiconductor HgCdTe.
窄禁带半导体碲镉汞红外焦平面列阵研究是当代红外光电子技术的前沿。
The study of the infrared focal plane array based on the narrow gap semiconductors HgCdTe is a hot topic in the field of advanced infrared optoelectronics.
文章主要介绍光吸收跃迁效应在窄禁带半导体红外探测器应用方面的研究进展。
This paper reviews the research on this effect in narrow gap semiconductors for infrared photo-electronic detectors.
文章主要介绍光吸收跃迁效应在窄禁带半导体红外探测器应用方面的研究进展。
This paper reviews the research on this effect in narrow gap semiconductors for infrared photo-electronic detectors.
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