由此，设计了一种基于这种双势垒磁性隧道结隧穿特性的自旋晶体管。
We designed a few kind of spin transistors based on the spin_dependent resonant tunneling effect of the DBMTJs.
以单电子晶体管为研究对象，系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。
The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, single electron tunneling were described with single electron transistor(SET) as the research object.
用数值分析的方法讨论了中性陷阱对超薄场效应晶体管（MOSFET）隧穿电流的影响。
The effect of neutral trap on tunneling current in ultrathin MOSFETs is investigated by numerical analysis.
最后，我们用TCAD工具模拟了隧穿晶体管(TFET)的特性，考察了TFET器件的可靠性并与传统MOSFET做了比较。
Finally, we use the TCAD tools to simulate the characteristics of tunneling FET (TFET) and compare the reliability issues with traditional MOSFET.
最后，我们用TCAD工具模拟了隧穿晶体管(TFET)的特性，考察了TFET器件的可靠性并与传统MOSFET做了比较。
Finally, we use the TCAD tools to simulate the characteristics of tunneling FET (TFET) and compare the reliability issues with traditional MOSFET.
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