管芯研究结果表明，在适当的退火条件下，离子注入掺杂制备浅结是改善器件特性较为理想的方法。
Test results show that the preparation of shallow junctions by ion implantation with proper annealing is an ideal technique for improvement in the device performances.
就目前而言，已有的离子注入技术(包括离子注入设备系统)尚不能满足甚亚微米器件和电路制造的需要。
Now, the present ion implantation technology, especially ion implantation equipment and systems, can not meet the needs in the manufacturing of deep submicron devices and circuits.
这些纳米粒子呈现的等离子体激元震荡导致玻璃的非线性光学性质增强，因此离子注入的玻璃可以应用于全光学开关器件。
These nanoparticles exhibit plasmon resonance, which enhance the nonlinear optical properties of the glass, so that the implanted glass may be used for all_optical switching devices.
长期从事先进功能材料薄膜制备和离子注入改性方面的科学研究，重点是宽禁带半导体材料与器件。
Main research fields are the preparation and ion implantation studies of advanced functional material films. The focuses are on the material and device characteristics of wide band gap semiconductors.
计算机软件模拟被用来分析抗穿通离子注入中离子束精度偏差对半导体器件（低至36纳米结器件）的影响。
The Computer Software Simulation is used to analyse the effect of punchtrhough stop implantation precision on the performance of MOSFET device (low to the 36nm junction device).
计算机软件模拟被用来分析抗穿通离子注入中离子束精度偏差对半导体器件（低至36纳米结器件）的影响。
The Computer Software Simulation is used to analyse the effect of punchtrhough stop implantation precision on the performance of MOSFET device (low to the 36nm junction device).
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