弱电流测量的各种应用包括电容器的漏电、弱电流半导体、光和离子束测量等。
Low current measurement applications include capacitor leakage, low current semiconductor, light, and ion beam measurements.
极化子的研究对于解释离子晶体和极性半导体的光跃迁过程及输运现象有重要意义。
The study on this subject plays an important role in explaining the phenomena of light transition and transport in the ionic crystal and polar semiconductor.
在详细阐述碳纳米管传感器工作机理的基础上，用半导体杂质理论和离子对吸附模型对这一最新实验结果作出理论解释。
The Theory of Semiconductor Impurities along with an ion-pair model is used to explain this new experiment phenomenon, based on detailed discussion of the mechanism of SWNT sensors.
磷化氢(PH3)是一种重要的电子特气，主要用于n型半导体的掺杂、离子注入和化学气相沉积(CVD)等。
Phosphine (PH3) is an important electronic specific gas which is mainly used in fields of N-type semiconductor doping, ion implement and chemical vapor deposition (CVD) etc.
等离子体加工技术是在半导体制造中创立起来的一种新技术。
Plasma processing technology is a new technology developed in semiconductor manufacturing.
迄今为止，人们已经利用离子注入技术在光学晶体、玻璃、半导体以及有机聚合物等大量光学材料中形成了光波导结构。
Up to now, many waveguide structures have been formed by ion implantation in various materials such as optical crystals, glasses, semiconductors and polymers, etc.
本发明涉及一种离子注入机用的晶片夹，属于半导体装备制造领域。
The invention relates to a wafer clamp for an ion implanter which belongs to the field of semiconductor equipment manufacture.
在皮秒脉冲激光辐照时，半导体材料表面的能量转换过程中，重点讨论能量从电子-空穴等离子体到晶格的转换过程。
The processes of energy transfer of semiconductor surface irradiated by picosecond laser pulses are studied. Discussion is focussed on energy transfer from the electron-hole plasma to the lattice.
目的研究超声药物离子导入结合半导体激光治疗慢性盆腔炎的效果。
ObjectiveTo study the effect of ultrasound transdermal drug delivery combining with semiconductor laser on chronic pelvic inflammation disease(CPID).
长期从事先进功能材料薄膜制备和离子注入改性方面的科学研究，重点是宽禁带半导体材料与器件。
Main research fields are the preparation and ion implantation studies of advanced functional material films. The focuses are on the material and device characteristics of wide band gap semiconductors.
该镍离子掺杂的氧化镉基稀磁半导体纳米材料存在形态为纳米粉末和纳米薄膜。
The existence mode of the nickel ion-doped cadmium oxide-based diluted magnetic semiconductor nano material is the nano powder and the nano film.
利用离子注入技术，对稀土掺杂到半导体单晶硅中的光致发光行为进行了研究。
The photoluminescence properties of rare earth doped silicon were investigated with ion beam technique.
结合我们在热敏金属离子晶体和半导体方面所掌握的知识和实验资料，对此设想的可行性进行了论证。
Lastly we put forward that with the rising of the temperature of spectra thermal line shift, stealth of Hyper-spectral will be realized according to the metal ionic crystal.
在WO_3中掺入杂质离子，制成傍热式厚膜元件，结合开温脱附（TPD）和半导体分析，研究了掺杂离子对元件性能的影响。
This paper, heating type gas sensers had been made using doping ion and WO_3 semiconductor thick film. Combining TPD and semiconductor analysis, studied the effect to characteristic of O_3 Sensors.
计算机软件模拟被用来分析抗穿通离子注入中离子束精度偏差对半导体器件（低至36纳米结器件）的影响。
The Computer Software Simulation is used to analyse the effect of punchtrhough stop implantation precision on the performance of MOSFET device (low to the 36nm junction device).
方法：108例入组患者，随机分为2组，56例半导体激光治疗组，52例超短波中药离子导入治疗。对两组病例的治疗疗效做出比较。
Method: 108 patients were divided into two large groups randomly, 56 groups were in semi-conductor laser therapy, 52 groups were in ultrashort wave Chinese treatment iontophoresis.
射频辉光放电等离子体在微电子及半导体薄膜材料生长等方面有着广泛的应用。
Plasma in radio frequency (rf) glow discharge is widely used in the preparation of semiconductor film materials and microelectronic industry.
本发明提供了一种对于半导体处理中使用的含卤素等离子体耐腐蚀的陶 瓷制品。
Methods of applying specialty ceramic materials to semiconductor processing apparatus, where the specialty ceramic materials are resistant to halogen-comprising plasmas.
采用溶胶 凝胶金属氧化物半导体薄膜 ，作为表面等离子体激元共振效应的光化学传感器的传感介质。
Optical properties of surface plasmons induced by the plan of a periodically arranged dielectric spheres on the metal slab;
采用溶胶 凝胶金属氧化物半导体薄膜 ，作为表面等离子体激元共振效应的光化学传感器的传感介质。
Optical properties of surface plasmons induced by the plan of a periodically arranged dielectric spheres on the metal slab;
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