并且详细论述离子刻蚀的原理以及离子源的参数设计。
The theory of ion etching and the parameter of ion source designing are discussed in detail.
通过深紫外光刻和感应耦合等离子刻蚀设备，制备了所设计的器件。
The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching.
利用并行直写技术与感应耦合等离子刻蚀技术制作了部分二元光学元件。
Some binary optical elements were manufactured by parallel direct writing and inductive couple plasma etching technology.
通过反应离子刻蚀可以将光刻胶微透镜图形转移至这种高性能的聚合物材料上。
Pattern transfer technique is used to transfer photoresist microlens arrays into the polymer underlayer.
本文采用X光电子能谱加氩离子刻蚀法，测出三种分散剂在煤表面吸附膜的近似厚度。
The thickness of absorbed films was measured for three CWM dispersants by X-rayphotoelectric spectrometer and argon-ion etching in this report.
衍射光学元件的制作技术主要包括激光或电子束直写、反应离子刻蚀、离子束铣及薄膜沉积。
DOE's fabrication techniques mainly include laser beam or electron beam writing, RIE, ion milling and thin film deposition.
我们同时对反应离子刻蚀工艺中的等离子体充电效应和离子轰击对氧化硅造成的损伤进行了讨论。
At the same time, the influence of plasma charging and ion bombardment on the quality of silicon oxide are analyzed.
本文作者认为等离子体轰击高聚物表面引起的局部高温是离子刻蚀后试样表面出现伪迹的重要原因。
The authors think that the high temperature on polymer local surface produced by ion bombardment is the main cause of artifacts on sample surface treated by ion-etching.
新兴的3d互联技术以及高产量的MEMS应用需要成本低廉以及高产量的深层反应离子刻蚀系统。
Emerging 3d interconnection technologies and high volume MEMS applications require cost effective mass production DRIE systems.
对于光刻胶的去除用热丙酮泡、超声清洗、反应离子刻蚀和高温灰化法相结合，能达到较好的效果。
The other is the removal of SU-8, which can be resolved by the combination of marinating in hot acetone, ultrasonic cleanout, RIE and cineration at high temperature.
加速度计用普通的N型硅片制造，为了刻蚀高深宽比的结构，使用了深反应离子刻蚀（DRIE）工艺。
This accelerometer is fabricated by N type silicon wafer. To obtain high aspect ratio structure, deep reactive ion etching(DRIE) process is employed.
利用离子束刻蚀(IBE)和反应离子刻蚀(RIE)等干法刻蚀方法来制造带栅极的场发射阴极阵列。
The gated silicon field emitter arrays (FEA) with small gate aperture have been successfully fabricated by dry etching, including ion beam etching (IBE) and reactive ion etching (RIE).
对二氧化硅反应离子刻蚀中反应室压力，刻蚀气体流量和射频功率等因素对刻蚀速率和刻蚀均匀性的影响进行了研究。
The influence of chamber pressure, gas flow rate and RF power on micro loading effect in reactive ion etch of silicon dioxide is researched.
采用微波电子回旋共振等离子体反应离子刻蚀（E CR-R IE）装置对牦牛毛纤维进行表面改性，从而改善牦牛毛的可纺性。
Yak hairs were treated by the microwave electron cy cl otron resonance plasma reactive ion etching(ECR-RIE) equipment to improve its property of weave.
采用经过参数优化的DRIE刻蚀深硅槽，并用反应离子刻蚀(RIE)对深槽开口形状进行修正，制造了具有理想侧壁形状的深槽，利于介质的完全填充，避免产生空洞。
By optimizing DRIE parameters and RIE etching the trenches' opening, the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.
然后在氧等离子体中用电子束刻蚀法去除沟道区石墨烯形成晶体管的沟道。
They then defined the transistor channel using electron-beam lithography, removing graphene outside of channel regions with an oxygen plasma.
利用反应离子束刻蚀等微纳超精细加工而成的多层电介质结构反射镜可在高功率条件下实现啁啾脉冲的光谱整形。
The multilayer dielectric thin film reflector fabricated by top-down nano-fabrication processes can be used to realize the spectral reshaping of high power chirped pulses.
低能离子束注入对细胞的刻蚀作用提供了外源遗传物质进入细胞的途径。
Ion implantation may echo on plant cell, thus provide convenicence for foreign genetic material transferring into cell.
用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。
The optical emission spectrum of r. f. plasma during amorphous silicon based film etching in CF4 gas is detected.
在鞘层内存在大量高能离子，除表面反应外，离子还能对粉粒表面进行刻蚀，因此钝化效应将消失。
There were a lot of high energy ions in the sheath area, beside the surface reactions, the surface of particulates could be etched by the ions, and the passivation effect would be eliminated.
介绍了离子束刻蚀的二次效应对图形轮廓以及离子束刻蚀入射角对图形侧壁陡度的影响。
The influence of quadratic effect of ion-beam etching on pattern profile and the influence of ion-beam etching incidence Angle on slope of pattern sidewall are studied.
本文介绍微波等离子体刻蚀应用的实验结果。
In this paper, the result of etching application with microwave plasma will be introduced.
根据目前的实验研究报道，这种周期结构金属薄膜通常利用聚焦离子束刻蚀工艺来获得，器件的光学响应在可见光波段和近红外波段。
In most of the experiments reported to date, the perforated metal films were fabricated by the focused-ion-beam method, and their transmission enhancement was in the visible and near-infrared regions.
等离子体低温刻蚀是一种针对高深宽比结构的干法刻蚀技术。
High aspect ratio structures have been successfully fabricated by plasma cryo-etching on silicon wafers.
研究结果表明，低温等离子体表面改性处理能够刻蚀牦牛毛纤维表面的鳞片，而且空气等离子体的刻蚀效果优于氧等离子体的刻蚀效果；
The results reflect that treated by low temperature plasma processing the surface squama of yak hair is etched and the effect of air plasma is better than that of oxygen plasma.
本文简要介绍了微波ECR等离子体技术的原理，评述了近年来这种技术在CVD、PVD、刻蚀等方面的研究和应用的进展。
Principles of microwave ECR plasma technology are introduced briefly. Present development of it'S research and applications in system manufacturing, CVD, PVD and etching is reviewed.
因此，等离子体刻蚀的各向异性可以通过增加射频频率和射频功率来改善。
Therefore, plasma etching anisotropy can be improved by increasing rf frequency or rf-bias power.
因此，等离子体刻蚀的各向异性可以通过增加射频频率和射频功率来改善。
Therefore, plasma etching anisotropy can be improved by increasing rf frequency or rf-bias power.
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