本文首次提出了一种新型结构原理的低速大力矩电动机-半导体换流低速磁阻电动机(SCLRM)。
This dissertation presents a type of low speed and high torque motor-semiconductor converting low speed reluctance motor (SCLRM) with novel structure and principle for the first time.
本发明的半导体存储装置可降低其写入电流且不会劣化其磁阻值与热稳定性。
The semiconductor memory device can reduce the writing current thereof without degrading the magnetic resistance value and thermal stability thereof.
本发明的半导体存储装置可降低其写入电流且不会劣化其磁阻值与热稳定性。
The semiconductor memory device can reduce the writing current thereof without degrading the magnetic resistance value and thermal stability thereof.
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