研究了磁性薄膜材料的微观结构以及宏观特性的表征方法和原理。
Study measure and principle of microstructure and macroscopic quality of magnetic films materials.
本发明公开一种用于磁记录的写磁头的磁性薄膜材料及这种材料的制备方法。
The invention discloses a magnetic thin film material of a write head for magnetic recording and a preparation method of the material.
通过本文的研究表明，传输线上信号的衰减频率和强度主要依赖于磁性薄膜材料的亚铁磁共振频率和涡流损耗。
According to this paper, the frequency and intensity of the signal attenuation on transmission line are mainly depended on the ferromagnetic resonance frequency and eddy current loss.
采用经典XY模型，阐明了三角格子上层状超薄膜磁性材料的相变和临界现象。
Phase transitions and critical phenomena have been clarified for an XY model on the triangular lattice of ultra thin magnetic films.
氧化物磁性半导体薄膜的电输 运性质只与材料中氧空位的浓度相关。
Electric transport property of oxide magnetic semiconductor film is only related to concentration of oxygen vacancy in material.
稀土过渡族金属磁性薄膜作为高密度磁记录材料引起科技界的广泛关注。
RE-TM film used as high density magnetic recording material draws great attention.
然而，要想达到实用化仍需解决几个关键问题：有序化温度的降低：磁性颗粒大小一致而且彼此均匀的由非磁性材料分离：薄膜的取向。
Some key issues for the application of Ll_0-FePt films remained to be solved: decreasing the ordering temperature, magnetic particles were separated by nonmagnetic particles and uniform, orientation.
中子反射技术作为薄膜材料结构和性能表征手段之一，目前得到了广泛的应用，尤其是在磁性薄膜和有机薄膜等研究领域的某些方面更有其不可替代的作用。
Neutron reflectometry(NR)has been widely used in characterizing the structure and property of thin films, and it plays an indispensable role in studies of magnetic and organic thin films especially.
掺锰硅基磁性半导体薄膜材料，锰在硅中的含量为1-10％摩尔比的薄膜材料。
The invention is a kind of manganese-doped silicon group magnetic semiconductor film material. The content of the manganese in the silicon is 1-10% mol ratio.
掺锰硅基磁性半导体薄膜材料，锰在硅中的含量为1-10％摩尔比的薄膜材料。
The invention is a kind of manganese-doped silicon group magnetic semiconductor film material. The content of the manganese in the silicon is 1-10% mol ratio.
应用推荐