采用催化剂高温分解法，在硅片上成功地制备了碳纳米管薄膜。
By using the catalyst pyrolysis method, the carbon nanotube film was prepared on the different substrate materials.
本发明公开了一种基于电弧放电法制备单壁碳纳米管薄膜的装置。
The invention discloses a device for preparing single walled carbon nanotube film based on arc discharge.
通过催化裂解法制备了碳纳米管并进一步制备了碳纳米管薄膜电极。
Carbon nanotubes prepared by a catalytic pyrolysis method were considered as active electrode materials for the storage of energy in supercapacitors.
本文用离子束辅助沉积(IBAD)方法在碳纳米管薄膜表面制备铜薄膜。
We present the methods of forming textured metallic substrate by RABiTS and IBAD.
讨论了薄膜与阳极间隔以及有效发射面积对碳纳米管薄膜场发射性能的影响。
Effects of the sample-anode distance(the interval between sample and anode) and effective emission area on the field emission characteristics of carbon nanotube films were discussed.
利用碳纳米管薄膜作为阴极材料，给出并分析了碳纳米管薄膜阴极的场致发射特性。
With the carbon nanotube film as cathode materials, the field emission characteristics of the carbon nanotube film cathode are presented and analyzed.
与没有处理的碳纳米管薄膜相比，处理后的碳纳米管薄膜的场发射特性有很大的提高。
Compared with untreated films, the field emission properties of the treated ones are greatly enhanced.
碳纳米管薄膜机械强度高，化学稳定性好，并且有很低的发射场强阀值，较高的发射电流密度。
The aligned nanotube thin films are substantially strong, and chemically inertial with their onset field low and the emission current strong.
建立了定向薄膜生长的物理模型，提出了碳纳米管的开口生长机制。
A physical growth model was established for aligned CNT films, and the open-end growth mechanism of CNTs was proposed.
对基于印刷碳纳米管(CNT)薄膜的场发射器件的失效行为进行了研究。
The failure behavior of field emission devices based on printed carbon nanotube (CNT) films was investigated.
并且与加入未处理碳纳米管、处理后碳纳米管的聚乙烯醇薄膜在力学与电学性能方面进行了研究。
The electrical and mechanical properties of the films were compared with those containing untreated or treated CNTs.
并且与加入未处理碳纳米管、处理后碳纳米管的聚乙烯醇薄膜在力学与电学性能方面进行了研究。
The electrical and mechanical properties of the films were compared with those containing untreated or treated CNTs.
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