碳化钨和钴粉末的混合物被挤压成所需形状后进行烧结。后进行烧结。
Thee mixture of tungsten carbide and cobalt powder is pressed into the required shape and then sintered.
经过渗硅试验后得到的反应烧结碳化硅陶瓷中含有大量的碳化硅，以及部分的自由硅和少量的未反应的碳。
The reactive sintering silicon carbide ceramics made by ihrigizing reaction include large quantity of silicon carbide, partial Silicon and a small amount of un-reacted carbon.
将用于制备碳化硅泡沫陶瓷的浆料烘干、制粉、干压、烧结，从而探讨浆料的成分与烧结性能的关系。
The slurry for SiC ceramics foam was dried, powdered, dry pressed and sintered in order to investigate the relation between composition and sintering performance.
采用真空无压烧结进行碳化硅复合粉体的烧结致密化。
The densification of SiC composite powders was carried out by vacuum pressureless sintering.
利用放电等离子烧结技术尝试烧结出了超细纯碳化钨粉。
Attempt to sinter ultrafine Pure WC by spark plasma sintering was made.
研究了原料粉末对碳化硼陶瓷常压烧结性能的影响。
The effect of raw material powder on the sintered properties of Boron Carbide was investigated.
研究了合金成分、烧结方式、工艺参数等对表层缺立方相碳化物形成过程的影响。
The influence of alloy contents, sintering method and process parameters on the formation of surface layer deficient in cubic carbide has been studied.
碳化硅粉末经压制成型后，在高温常压下固相烧结制成多孔碳化硅样品。
Sample of porous SiC polycrystals are prepared by solid sintering process under high temperature and normal pressure using moulding SiC powder.
研究了碳化硅耐火材料的凝胶注模成型及其烧结性状。
It was described that study on gel casting and sintering of silicon carbide in this paper.
以碳化硅和碳为糊料的主要原料，采用素坯连接的方法焊接反应烧结碳化硅(RBSC)陶瓷。
A method of joining green state with carbide and silicon carbide was applied to join reaction-bonded silicon carbide (RBSC) ceramics.
研究对无压烧结碳化硅陶瓷的实际生产提供参考依据，具有重要的应用前景。
The researches were important for offering the reference for the production of silicon carbide ceramic.
产品特点：硅莫砖以阳泉特级矾土熟料和碳化硅为主要原料，经高压成型、高温烧结而成。
Properties of Products: The raw materials for this product are Yangquan bauxite and SiC, being pressed and sintered.
研究了反应烧结碳化硅陶瓷的显微组织和性能与生坯碳含量、成型压力以及碳粉粒度的关系。
The effects of carbon content, moulding pressure, and carbon particle size of green body on microstructure and properties of reaction-bonded silicon carbide (RBSC) have been investigated.
用球状烧结碳化钨代替粒状铸造碳化钨作钢齿钻头齿面堆焊材料是提高齿面强化效果的有效途径。
It is available to strengthen the bit teeth by replacing the granular casting tungsten carbide with the spheroidal sintering tungsten carbide.
对于纯钛粉、碳化硼粉末体系，只完成了阶段性的工作，烧结工艺的研究还有待于进一步进行。
For pure titanium powder, boron carbide powder system just complete a stage of work, the sintering process has yet to be further studied.
用反应粘接的方法获得了反应烧结碳化硅材料之间、反应烧结碳化硅和重结晶碳化硅材料间的连接。
The joints between reaction-sintered silicon carbide and recrystallized silicon carbide materials have been obtained using a reaction bonding approach.
研究了液态硅参与下的反应烧结碳化硅的工艺参数、显微组织对其电阻率的影响。
The relationship of technological parameters and microstructure to the resistivity of reaction-bonded silicon carbide(RBSiC) in the presence of liquid silicon was studied in this paper.
采用WCF - 2多用磁性分析仪对高温高压烧结的人造金刚石聚晶及其合成原料(金刚石粉、硅粉、钛粉、石墨)和烧结过程中生成的碳化硅等进行了磁性测量。
The magnetism of the synthetic polycrystalline diamond and its raw materials including diamond powder, silicon powder, titanium powder, graphite and resultant carborundum was measured by WCF-2.
其烧结机理以碳的溶解及碳化硅的淀析过程为主。
The sintering mechanism is characterized by the carbon dissolved in melt silicon and precipitation of SiC from melt silicon.
考虑不同因素的影响，建立了反应烧结碳化硅反应烧结过程的一组数学模型，它们可表述为一个拟线性的抛物型方程。
Several mathematical models for reaction process of reaction bonded silicon carbide are set up, which are quasi linear parabolic systems.
本文研究了不同成型工艺对反应烧结碳化硅陶瓷材料的素坯及烧结体的显微结构、力学性能的影响。
The influence of different shaping process on the microstructure and mechanical properties of green body and sinter was studied in this paper.
本文介绍了研究者在提高反应烧结碳化硅陶瓷性能方面所做的工作。
In this paper, we introduce some methods on how to improve the properties of RBSC material.
本发明同现有技术相比，工艺简单，所得碳化硅烧结坯致密度高，无游离硅残留，强度与韧度较高。
Compared with prior art, the process is simple, and the obtained SiC sintered compact has high density, no residue of free silicon and high strength and toughness.
本发明同现有技术相比，工艺简单，所得碳化硅烧结坯致密度高，无游离硅残留，强度与韧度较高。
Compared with prior art, the process is simple, and the obtained SiC sintered compact has high density, no residue of free silicon and high strength and toughness.
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